LRS1806C Sharp Electronics, LRS1806C Datasheet - Page 8

• Manufacturer Part Number: LRS1806C
• Manufacturer: Sharp Electronics

Specifications of LRS1806C

• Lead Free Status / RoHS Status: Supplier Unconfirmed

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3. Truth Table
3.1 Bus Operation
Notes:
Read
Output
Disable
Write
Read
Output
Disable
Write
Standby
Reset Power
Down
Standby
Reset Power
Down
Standby
Reset Power
Down
1. L = V
2. Command writes involving block erase (page buffer) program are reliably executed when F-V
3. Never hold F-OE low and F-WE low at the same timing.
4. Refer Section 5. Command Definitions for Flash Memory valid D
5. F-WP set to V
6. Electricity consumption of Flash Memory is lowest when F-RST = GND ±0.2V.
7. Flash Read Mode
Read Array
Read Identifier Codes
Read Query
Flash
= 2.7V to 3.3V.
Command writes involving full chip erase is reliably executed when F-V
Block erase, full chip erase, (page buffer) program with F-V
be attempted.
IL
Mode
, H = V
Standby
Sleep
Read
Output
Disable
Write
Read
Output
Disable
Write
Standby
Sleep
combo
Smart
RAM
(1)
IL
IH
or V
, X = H or L, High-Z = High impedance. Refer to the DC Characteristics.
Notes
2,3,4,5
2,3,4,5
IH
3,5
3,5
5,6
5,6
5,6
5,6
5,6
5,6
5,6
5,6
5
5
5
5
.
Refer to the Appendix Refer to the Appendix
F-CE F-RST F-OE F-WE S-CE
H
X
H
X
H
X
L
L
Address
See 5.2
X
H
H
H
L
H
L
H
L
H
H
X
X
X
X
L
L
L R S1 8 3 6
DQ
H
H
X
X
X
X
L
L
See 5.2
0
D
to DQ
OUT
PP
H
X
H
X
L
L
15
< V
1
IN
S-CE
PPH1/2
during a write operation.
H
L
H
H
H
L
2
PP
(Min.) produce spurious results and should not
S-OE S-WE S-LB S-UB DQ
= V
8. S-UB, S-LB Control Mode
S-LB S-UB DQ
X
X
X
H
X
X
H
X
X
X
L
L
L
L
H
PPH1
X
X
H
H
H
H
H
H
X
X
L
L
H
and F-V
L
L
D
D
H
X
H
X
High - Z
CC
OUT
OUT
0
PP
X
X
X
X
to DQ
= 2.7V to 3.3V.
/D
/D
= V
H
X
H
X
IN
IN
PPH1/2
7
(8)
(8)
(8)
(8)
DQ
D
D
High - Z
High - Z
High - Z
High - Z
High - Z
High - Z
High - Z
OUT
OUT
and F-V
8
0
D
D
to DQ
to DQ
(7)
(7)
IN
IN
/D
/D
IN
IN
15
15
CC
5