RD28F1604C3TD70S B93 Intel, RD28F1604C3TD70S B93 Datasheet - Page 40

• Manufacturer Part Number: RD28F1604C3TD70S B93
• Manufacturer: Intel

Specifications of RD28F1604C3TD70S B93

• Operating Supply Voltage (max): 3.3V
• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Not Compliant

C3 SCSP Flash Memory
5.11
Table 20.
Figure 11.
26 Aug 2005
40
V
I
t
t
Notes:
1.
2.
DR
SDR
RDR
DR
Sym
Typical values at nominal S-V
S-CS1# ≥ V
S-V
Deep Retention Current -
8-Mbit
Deep Retention Current -
4-Mbit
Deep Retention Current -
2-Mbit
Data Retention Set-up Time
Recovery Time
CC
SRAM Data Retention Characteristics
Temperature
SRAM Data Retention Characteristics
SRAM Data Retention Waveform
for Data Retention
CC –
Parameter
Intel
0.2 V, S-CS2 ≥ V
®
Advanced+ Boot Block Flash Memory (C3) SCSP Family
CS
CS
CC
2
1
# (E
Order Number: 252636, Revision: 004
(E
, T
CC –
2
)
CASE
1
3.0/2.7V
)
3.0/2.7V
Note
0.2 V (S-CS1# controlled) or S-CS2 ≤ 0.2 V (S-CS2 controlled).
2
GND
GND
2.2V
0.4V
V
V
= +25 °C.
V
V
DR
DR
CC
CC
CS
CS
1
2
Min
t
1.5
# Controlled
Controlled
RC
–
–
–
0
Typ
t
(1)
SDR
–
–
–
–
–
–
t
—Extended Temperature
SDR
Max
3.3
6
5
4
–
–
Data Retention Mode
Data Retention Mode
—
Unit
µA
µA
µA
ns
ns
V
Extended
CS
S-V
CS
See Data Retention Waveform
1
1
CC
# ≥ V
# ≥ V
= 1.5 V
Test Conditions
t
CC –
CC –
RDR
t
0.2 V
0.2 V
RDR
Datasheet