RD28F1604C3TD70S B93 Intel, RD28F1604C3TD70S B93 Datasheet - Page 39

• Manufacturer Part Number: RD28F1604C3TD70S B93
• Manufacturer: Intel

Specifications of RD28F1604C3TD70S B93

• Operating Supply Voltage (max): 3.3V
• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Not Compliant

Table 19.
Figure 10.
Datasheet
ADDRESSES (A)
DATA (D/Q)
UB#, LB#
CS
WE# (W)
OE# (G)
CS
1
# (E
SRAM AC Characteristics—Write Operations
AC Waveform: SRAM Write Operations
2
Notes:
1.
2.
3.
4.
5.
(E
W8
W9
C3 SCSP Flash Memory
#
1
2
)
)
Intel
V
V
V
V
V
V
V
V
V
V
V
V
V
V
See
A write occurs during the overlap (t
goes low and S-WE# goes low with asserting S-UB# or S-LB# for single byte operation or
simultaneously asserting
S-UB# and S-LB# for double byte operation. A write ends at the earliest transition when S-CS
high and S-WE# goes high. The t
t
t
t
CS
OH
IH
IH
AS
WP
WR
OL
IH
IH
IH
IH
IH
IL
IL
IL
IL
IL
t
t
WR
BW
Sym
®
1
is measured from the address valid to the beginning of write.
is measured from S-CS
# or S-WE# going high.
is measured from the end of write to the address change. t
Figure 10 “AC Waveform: SRAM Write Operations” on page
Advanced+ Boot Block Flash Memory (C3) SCSP Family
Standby
Write Recovery
S-UB#, S-LB# Setup to S-WE# (S-CS
High Z
Order Number: 252636, Revision: 004
W2
Parameter
Address Selection
1
Address Stable
# going low to end of write.
Device
WP
WP
is measured from the beginning of write to the end of write.
) of low S-CS
W5
1
Data In
W6
#) Going High
(1,2)
1
W1
# and low S-WE#. A write begins when S-CS
W9
W3
W4
WR
39.
Density
applied in case a write ends as S-
Note
5
Volt
2.7 V – 3.3 V
Min
60
2/4/8-Mbit
0
W8
26 Aug 2005
Max
W7
High Z
–
–
1
# goes
Unit
ns
ns
1
#
39