PF38F1030W0ZBQ0S B93 Intel, PF38F1030W0ZBQ0S B93 Datasheet - Page 22

• Manufacturer Part Number: PF38F1030W0ZBQ0S B93
• Manufacturer: Intel

Specifications of PF38F1030W0ZBQ0S B93

• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Compliant

Intel® Wireless Flash Memory (W18/W30 SCSP)
Table 11.
Figure 5.
Table 12.
June 2005
22
Note:
1.
2.
3.
4.
R-UB#, R-LB#
ADDRESSES
R12
R11
W1
W2
W3
W4
W5
W6
W7
#
#
S-CS1#
R-WE#
S-CS2
R-OE#
DATA
See
Timings of t
referenced to output voltage levels.
At any given temperature and voltage condition, t
to device interconnection.
Sampled but not 100% tested.
Symbol
Symbol
Figure 5, “AC Waveform SRAM Read Operations”
t
t
BHZ
BLZ
t
t
t
t
t
t
t
WC
DW
CW
WP
AW
AS
DH
SRAM AC Characteristics — Read Operations
AC Waveform SRAM Read Operations
SRAM AC Characteristics — Write Operations
HZ
Standby
R-UB#, R-LB# to Output in Low-Z
R-UB#, R-LB# to Output in High-Z
and t
Write Cycle Time
Address Setup to R-WE# (S-CS1#) and R-UB#/R-LB# Low
R-WE# (S-CS1#) Pulse Width
Data to Write Time Overlap
Address Setup to R-WE# (S-CS1#) High
S-CS1# (R-WE#) Setup to R-WE# (S-CS1#) High
Data Hold from R-WE# (S-CS1#) High
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not
Intel® Wireless Flash Memory (W18/W30 SCSP)
Order Number: 251407, Revision: 009
R6
R2
R11
Parameter
Parameter
R3
R7
R5
R4
HZ
(Max) is less than t
Address Stable
.
R1
R1
LZ
Valid Data
(Max) both for a given device and from device
Min
70
55
30
60
60
0
0
Min
0
0
Max
Max
25
–
–
–
–
–
–
–
–
R10
R12
R8
R9
Unit
ns
ns
Unit
ns
ns
ns
ns
ns
ns
ns
Datasheet
Notes
Notes
1,4
1,4
1,2,3
1,4
1
1
1
1
1