GD82559ER S L3DG Intel, GD82559ER S L3DG Datasheet - Page 81
![](/photos/31/31/313100/gd82559ersl3dg_sml.jpg)
GD82559ER S L3DG
Manufacturer Part Number
GD82559ER S L3DG
Description
Manufacturer
Intel
Datasheet
1.GD82559ER_S_L3DG.pdf
(94 pages)
Specifications of GD82559ER S L3DG
Operating Supply Voltage (typ)
3.3V
Operating Supply Voltage (min)
3V
Operating Temperature Classification
Commercial
Package Type
BGA
Mounting
Surface Mount
Pin Count
196
Lead Free Status / RoHS Status
Not Compliant
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NOTES: Current is measured on all V
NOTES: Current is measured on all V
1. Transmitter peak current is attained by dividing the measured maximum differential output peak voltage by
1. Transmitter peak current is attained by dividing the measured maximum differential output peak voltage by
V
V
V
I
R
V
V
V
V
I
CCT100
CCT10
OD100
OD10
IDR100
ICM100
Symbol
IDA10
IDR10
ICM10
the load resistance value.
ID10
the load resistance value.
Input Differential
Reject Peak Voltage
Input Common Mode
Voltage
Output Differential
Peak Voltage
Line Driver Supply
Peak Current
Input Differential
Impedance
Input Differential
Accept Peak Voltage
Input Differential
Reject Peak Voltage
Input Common Mode
Voltage
Output Differential
Peak Voltage
Line Driver Supply
Peak Current
Parameter
Rbias100
Figure 24. RBIAS100 Resistance Versus Transmitter Current
585 0hm
619 Ohm
650 Ohm
Table 19. 100BASE-TX Voltage/Current Characteristics
Table 20. 10BASE-T Voltage/Current Characteristics
CC
CC
RBIAS100 = 619
10 MHz
5 MHz
5 MHz
RL = 100
RBIAS10 = 549
pins (V
pins (V
19mA
Condition
f
f
CC
CC
10 MHz
10 MHz
= 3.3 V).
= 3.3 V).
20 mA
±585
0.95
Min
2.2
10
0
Networking Silicon — GD82559ER
21mA
Typical
V
V
±440
±440
1.00
CC
CC
20
48
/2
/2
Icct100
±3100
±100
±300
1.05
Max
2.8
Units
mV
mA
mV
mV
mA
K
V
V
V
V
Notes
1
1
75
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