ICS854S058AGILF IDT, Integrated Device Technology Inc, ICS854S058AGILF Datasheet - Page 4

• Manufacturer Part Number: ICS854S058AGILF
• Manufacturer: IDT, Integrated Device Technology Inc

Specifications of ICS854S058AGILF

• Lead Free Status / RoHS Status: Compliant

ICS854S058I Datasheet
Table 4B. LVCMOS/LVTTL DC Characteristics, V
Table 4C. LVPECL Differential DC Characteristics, V
NOTE 1: V
NOTE 2: Common mode input voltage is defined as V
Table 4D. LVDS DC Characteristics, V
ICS854S058AGI REVISION A DECEMBER 11, 2009
Symbol
V
V
I
I
Symbol
I
I
V
V
Symbol
V
∆V
V
∆V
IH
IL
IH
IL
OD
OS
IH
IL
PP
CMR
OD
OS
IL
Parameter
Input High Current
Input Low Current
Peak-to-Peak Voltage; NOTE 1
Common Mode Input Voltage;
NOTE 1, 2
Parameter
Input High Voltage
Input Low Voltage
Input High Current
Input Low Current
Parameter
Differential Output Voltage
V
Offset Voltage
V
should not be less than -0.3V.
OD
OS
Magnitude Change
Magnitude Change
PCLK[0:7],
nPCLK[0:7]
PCLK[0:7]
nPCLK[0:7]
SEL[0:2]
SEL[0:2]
DD
= 3.3V ± 5%, T
IH
.
Test Conditions
DD
V
V
V
DD
DD
DD
V
V
= 3.3V ± 5%, T
Test Conditions
Test Conditions
DD
DD
DD
= 3.465V, V
= 3.465V, V
= 3.465V, V
= V
= V
A
= 3.3V ± 5%, T
= -40°C to 85°C
IN
IN
= 3.465V
= 3.465V
4
IN
IN
IN
= 0V
= 0V
= 0V
A
= -40°C to 85°C
A
= -40°C to 85°C
Minimum
GND + 1.2
Minimum
1.125
Minimum
247
-150
0.15
-10
-0.3
2.2
-10
8:1, DIFFERENTIAL-TO-LVDS CLOCK MULTIPLEXER
Typical
Typical
Typical
©2009 Integrated Device Technology, Inc.
Maximum
Maximum
Maximum
V
1.375
DD
454
V
150
50
50
150
1.2
0.8
DD
+ 0.3
Units
Units
Units
mV
mV
mV
µA
µA
µA
µA
µA
V
V
V
V
V