PDTA115ES,126 NXP Semiconductors, PDTA115ES,126 Datasheet - Page 9

• Manufacturer Part Number: PDTA115ES,126
• Description: TRANS PNP W/RES 50V TO-92
• Manufacturer: NXP Semiconductors

Specifications of PDTA115ES,126

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 20mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 100K
• Resistor - Emitter Base (r2) (ohms): 100K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 500mW
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058152126; PDTA115ES AMO; PDTA115ES AMO

NXP Semiconductors
2004 Jul 30
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
PNP resistor-equipped transistors;
R1 = 100 kΩ, R2 = 100 kΩ
DIMENSIONS (mm are the original dimensions)
Note
1. Including plating thickness
UNIT
mm
VERSION
OUTLINE
SOT883
A
0.50
0.46
(1)
max.
0.03
e
A
1
b
0.20
0.12
2
1
b
IEC
0.55
0.47
b
1
L
0.62
0.55
D
1.02
0.95
E
JEDEC
e 1
E
0.35
e
REFERENCES
0.65
e
1
L 1
0.30
0.22
SC-101
L
JEITA
9
3
0.30
0.22
L
A 1
D
1
b 1
A
0
PROJECTION
EUROPEAN
scale
0.5
PDTA115E series
Product data sheet
ISSUE DATE
03-02-05
03-04-03
1 mm
SOT883