PDTA115ES,126 NXP Semiconductors, PDTA115ES,126 Datasheet - Page 14

• Manufacturer Part Number: PDTA115ES,126
• Description: TRANS PNP W/RES 50V TO-92
• Manufacturer: NXP Semiconductors

Specifications of PDTA115ES,126

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 20mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 100K
• Resistor - Emitter Base (r2) (ohms): 100K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 500mW
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058152126; PDTA115ES AMO; PDTA115ES AMO

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NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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R75/03/pp14
Date of release: 2004 Jul 30
Document order number: 9397 750 13648