PDTA115ES,126 NXP Semiconductors, PDTA115ES,126 Datasheet - Page 3

• Manufacturer Part Number: PDTA115ES,126
• Description: TRANS PNP W/RES 50V TO-92
• Manufacturer: NXP Semiconductors

Specifications of PDTA115ES,126

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 20mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 100K
• Resistor - Emitter Base (r2) (ohms): 100K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 500mW
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058152126; PDTA115ES AMO; PDTA115ES AMO

NXP Semiconductors
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
2004 Jul 30
PDTA115ES
PDTA115EE
PDTA115EEF
PDTA115EK
PDTA115ET
PDTA115EU
PDTA115EM
TYPE NUMBER
PNP resistor-equipped transistors;
R1 = 100 kΩ, R2 = 100 kΩ
handbook, halfpage
handbook, halfpage
handbook, halfpage
2
1
Bottom view
Top view
1
1
2
3
SIMPLIFIED OUTLINE AND SYMBOL
3
2
3
MAM338
1
3
1
1
R1
R1
R2
R2
R1
MDB267
MDB271
R2
3
2
3
2
2
3
PDTA115E series
PIN
1
2
3
1
2
3
1
2
3
Product data sheet
PINNING
base
collector
emitter
base
emitter
collector
base
emitter
collector
DESCRIPTION