PDTB123YT,215 NXP Semiconductors, PDTB123YT,215 Datasheet - Page 7
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PDTB123YT,215
Manufacturer Part Number
PDTB123YT,215
Description
TRANS PNP W/RES 50V SOT-23
Manufacturer
NXP Semiconductors
Datasheet
1.PDTB123YT215.pdf
(10 pages)
Specifications of PDTB123YT,215
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 50mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 2.5mA, 50mA
Current - Collector Cutoff (max)
500nA
Power - Max
250mW
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
2.2 KOhms
Typical Resistor Ratio
0.219
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 50 V
Peak Dc Collector Current
500 mA
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Emitter- Base Voltage Vebo
- 5 V
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934058983215
PDTB123YT T/R
PDTB123YT T/R
PDTB123YT T/R
PDTB123YT T/R
NXP Semiconductors
9. Packing information
PDTB123Y_SER_2
Product data sheet
Table 9.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
PDTB123YK
PDTB123YS
PDTB123YT
For further information and the availability of packing methods, see
Packing methods
Package
SOT346
SOT54
SOT54A
SOT54 variant
SOT23
PNP 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
Rev. 02 — 16 November 2009
Description
4 mm pitch, 8 mm tape and reel -115
bulk, straight leads
tape and reel, wide pitch
tape ammopack, wide pitch
bulk, delta pinning
4 mm pitch, 8 mm tape and reel -215
PDTB123Y series
Section
[1]
Packing quantity
3000
-
-
-
-
12.
© NXP B.V. 2009. All rights reserved.
5000
-
-412
-
-
-112
-
10000
-135
-
-116
-126
-
-235
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