PDTB123YT,215 NXP Semiconductors, PDTB123YT,215 Datasheet - Page 2

• Manufacturer Part Number: PDTB123YT,215
• Description: TRANS PNP W/RES 50V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of PDTB123YT,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 50mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Typical Input Resistor: 2.2 KOhms
• Typical Resistor Ratio: 0.219
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 50 V
• Peak Dc Collector Current: 500 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Emitter- Base Voltage Vebo: - 5 V
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058983215; PDTB123YT T/R; PDTB123YT T/R

NXP Semiconductors
2. Pinning information
PDTB123Y_SER_2
Product data sheet
Table 3.
Pin
SOT54
1
2
3
SOT54A
1
2
3
SOT54 variant
1
2
3
SOT23, SOT346
1
2
3
Pinning
Description
input (base)
output (collector)
GND (emitter)
input (base)
output (collector)
GND (emitter)
input (base)
output (collector)
GND (emitter)
input (base)
GND (emitter)
output (collector)
PNP 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
Rev. 02 — 16 November 2009
Simplified outline
PDTB123Y series
1
3
001aab348
006aaa144
001aab347
001aab447
2
1
2
3
1
2
3
1
2
3
Symbol
© NXP B.V. 2009. All rights reserved.
1
1
1
1
R1
R1
R1
R1
R2
R2
R2
006aaa148
006aaa148
006aaa148
sym003
R2
2 of 10
2
3
2
3
2
3
3
2