PDTB123YT,215 NXP Semiconductors, PDTB123YT,215 Datasheet

TRANS PNP W/RES 50V SOT-23

PDTB123YT,215

Manufacturer Part Number
PDTB123YT,215
Description
TRANS PNP W/RES 50V SOT-23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PDTB123YT,215

Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 50mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 2.5mA, 50mA
Current - Collector Cutoff (max)
500nA
Power - Max
250mW
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
2.2 KOhms
Typical Resistor Ratio
0.219
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 50 V
Peak Dc Collector Current
500 mA
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Emitter- Base Voltage Vebo
- 5 V
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934058983215
PDTB123YT T/R
PDTB123YT T/R
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
500 mA PNP Resistor-Equipped Transistors (RET) family.
Table 1.
[1]
Table 2.
Type number
PDTB123YK
PDTB123YS
PDTB123YT
Symbol
V
I
R1
R2/R1
O
CEO
PDTB123Y series
PNP 500 mA, 50 V resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 10 kΩ
Rev. 02 — 16 November 2009
Built-in bias resistors
Simplifies circuit design
500 mA output current capability
Digital application in automotive and
industrial segments
Controlling IC inputs
Also available in SOT54A and SOT54 variant packages (see
Product overview
Quick reference data
[1]
Parameter
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
bias resistor ratio
Package
NXP
SOT346
SOT54
SOT23
JEITA
SC-59A
SC-43A
-
Conditions
open base
Reduces component count
Reduces pick and place costs
±10 % resistor ratio tolerance
Cost-saving alternative for BC807 series
in digital applications
Switching loads
Section
JEDEC
TO-236
TO-92
TO-236AB
Min
-
-
1.54
4.1
2).
Typ
-
-
2.2
4.55
Product data sheet
PDTD123YK
PDTD123YS
PDTD123YT
NPN complement
2.86
Max
−50
−500
5
Unit
V
mA

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PDTB123YT,215 Summary of contents

Page 1

PDTB123Y series PNP 500 mA resistor-equipped transistors 2.2 kΩ kΩ Rev. 02 — 16 November 2009 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistors (RET) family. Table 1. Type number ...

Page 2

... NXP Semiconductors 2. Pinning information Table 3. Pin SOT54 SOT54A SOT54 variant SOT23, SOT346 PDTB123Y_SER_2 Product data sheet PNP 500 mA resistor-equipped transistors 2.2 kΩ kΩ Pinning Description input (base) output (collector) GND (emitter) input (base) output (collector) GND (emitter) input (base) output (collector) ...

Page 3

... NXP Semiconductors 3. Ordering information Table 4. Type number PDTB123YK PDTB123YS PDTB123YT [1] Also available in SOT54A and SOT54 variant packages (see 4. Marking Table 5. Type number PDTB123YK PDTB123YS PDTB123YT [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). ...

Page 4

... NXP Semiconductors 6. Thermal characteristics Table 7. Symbol R th(j-a) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 7. Characteristics Table 8. ° amb Symbol Parameter I collector-base cut-off CBO current I collector-emitter CEO cut-off current I emitter-base cut-off EBO current h DC current gain FE V collector-emitter ...

Page 5

... NXP Semiconductors (2) ( −1 −10 −1 −10 = − 100 °C (1) T amb = 25 °C (2) T amb = −40 °C (3) T amb Fig 1. DC current gain as a function of collector current; typical values −10 V I(on) (V) (1) (2) (3) −1 −1 −10 −1 −10 −1 −10 = −0.3 V ...

Page 6

... NXP Semiconductors 8. Package outline 3.1 2.7 3 3.0 1.7 2.5 1.3 1 1.9 Dimensions in mm Fig 5. Package outline SOT346 (SC-59A/TO-236) 4.2 3.6 3 max 4.8 4.4 5.2 14.5 5.0 12.7 Dimensions in mm Fig 7. Package outline SOT54A 2.5 2.1 Fig 9. Package outline SOT23 (TO-236AB) PDTB123Y_SER_2 Product data sheet PNP 500 mA resistor-equipped transistors ...

Page 7

... NXP Semiconductors 9. Packing information Table 9. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PDTB123YK PDTB123YS PDTB123YT [1] For further information and the availability of packing methods, see PDTB123Y_SER_2 Product data sheet PNP 500 mA resistor-equipped transistors 2.2 kΩ kΩ ...

Page 8

... Revision history Document ID Release date PDTB123Y_SER_2 20091116 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. PDTB123Y_SER_1 20050427 PDTB123Y_SER_2 Product data sheet PNP 500 mA resistor-equipped transistors 2.2 kΩ kΩ ...

Page 9

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 10

... NXP Semiconductors 13. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6 9 Packing information . . . . . . . . . . . . . . . . . . . . . 7 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 11 Legal information ...

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