MMBT3906LT1 ON Semiconductor, MMBT3906LT1 Datasheet - Page 6

• Manufacturer Part Number: MMBT3906LT1
• Description: TRANS SS GP PNP 40V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBT3906LT1

• Transistor Type: PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 225mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: PNP
• Power Dissipation Pd: 300mW
• Dc Collector Current: 200mA
• Dc Current Gain Hfe: 300
• Peak Reflow Compatible (260 C): No
• Leaded Process Compatible: No
• C-e Breakdown Voltage: -40V
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: MMBT3906LT1OSCT

- 0.5
- 1.0
- 1.5
- 2.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.0
0.5
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.0001
0
0
Figure 15. Collector Emitter Saturation Voltage
Figure 17. Base Emitter Voltage vs. Collector
0.001
q
V
VC
−55°C
CE
150°C
20
25°C
I
FOR V
C
/I
= 1 V
Figure 19. Temperature Coefficients
q
B
VB
40
= 10
0.001
CE(sat)
FOR V
I
I
C
C
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
I
C
vs. Collector Current
, COLLECTOR CURRENT (mA)
60
BE(sat)
0.01
80
Current
0.01
100
+25°C TO +125°C
- 55°C TO +25°C
120
150°C
+25°C TO +125°C
- 55°C TO +25°C
140
0.1
0.1
160
−55°C
http://onsemi.com
25°C
180
200
1
1
6
0.001
1000
0.01
100
0.1
1.4
1.2
1.0
0.8
0.6
0.4
0.2
10
1
0.1
0.01
0.0001
Figure 16. Base Emitter Saturation Voltage vs.
Thermal Limit
Single Pulse Test
@ T
I
C
V
T
−55°C
/I
150°C
25°C
A
CE
Figure 18. Current Gain Bandwidth vs.
A
B
= 25°C
= 25°C
= 10
= 2 V
Figure 20. Safe Operating Area
I
0.001
C
I
0.1
C
, COLLECTOR CURRENT (mA)
1
, COLLECTOR CURRENT (A)
Collector Current
Collector Current
100 ms
V
CE
1 s
0.01
10
1
(Vdc)
100
10
0.1
1 ms
10 ms
1000
100
1