MMBT3906LT1 ON Semiconductor, MMBT3906LT1 Datasheet
MMBT3906LT1
Manufacturer Part Number
MMBT3906LT1
Description
TRANS SS GP PNP 40V SOT23
Manufacturer
ON Semiconductor
Datasheet
1.MMBT3906LT3G.pdf
(7 pages)
Specifications of MMBT3906LT1
Transistor Type
PNP
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
225mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
PNP
Power Dissipation Pd
300mW
Dc Collector Current
200mA
Dc Current Gain Hfe
300
Peak Reflow Compatible (260 C)
No
Leaded Process Compatible
No
C-e Breakdown Voltage
-40V
Rohs Compliant
No
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-
Other names
MMBT3906LT1OSCT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBT3906LT1
Manufacturer:
Motorola
Quantity:
458 580
Company:
Part Number:
MMBT3906LT1
Manufacturer:
ON
Quantity:
3 000
Part Number:
MMBT3906LT1
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
MMBT3906LT1/
Manufacturer:
LRC/乐山
Quantity:
20 000
Company:
Part Number:
MMBT3906LT1G
Manufacturer:
ON
Quantity:
585 000
Company:
Part Number:
MMBT3906LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMBT3906LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
MMBT3906LT1H
Manufacturer:
ON/安森美
Quantity:
20 000
MMBT3906LT1G
General Purpose Transistor
PNP Silicon
Features
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Reference SOA curve.
© Semiconductor Components Industries, LLC, 2011
January, 2011 − Rev. 9
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Collector Current − Peak (Note 3)
Total Device Dissipation FR− 5 Board
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(Note 1) @ T
Derate above 25°C
Substrate, (Note 2) @ T
Derate above 25°C
Characteristic
A
Rating
= 25°C
A
= 25°C
Symbol
Symbol
T
V
V
V
R
R
J
I
P
P
CEO
CBO
, T
EBO
CM
I
qJA
qJA
C
D
D
stg
−55 to +150
Value
−200
−800
−5.0
Max
−40
−40
225
556
300
417
1.8
2.4
1
mW/°C
mW/°C
mAdc
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
mW
°C
†For information on tape and reel specifications,
MMBT3906LT1G
MMBT3906LT3G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
Device
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
ORDERING INFORMATION
2A = Specific Device Code
M
G
BASE
MARKING DIAGRAM
1
http://onsemi.com
= Date Code*
= Pb−Free Package
SOT−23 (TO−236)
1
1
(Pb−Free)
(Pb−Free)
Package
SOT−23
SOT−23
CASE 318
COLLECTOR
STYLE 6
2A M G
EMITTER
2
G
Publication Order Number:
3
2
10,000 / Tape & Reel
3
3,000 / Tape & Reel
MMBT3906LT1/D
Shipping
†
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MMBT3906LT1 Summary of contents
Page 1
... Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping SOT−23 3,000 / Tape & Reel (Pb−Free) SOT−23 10,000 / Tape & Reel (Pb−Free) Publication Order Number: MMBT3906LT1/D † ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I = −1.0 mAdc Collector −Base Breakdown Voltage (I = −10 mAdc Emitter −Base Breakdown Voltage (I = −10 mAdc, I ...
Page 3
10.6 V 300 ns DUTY CYCLE = 2% Figure 1. Delay and Rise Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS 10 7.0 C 5.0 obo C ibo 3.0 2.0 1.0 0.1 0.2 0.3 ...
Page 4
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS (V CE 5.0 SOURCE RESISTANCE = 200 1 4.0 SOURCE RESISTANCE = 200 0 3.0 SOURCE RESISTANCE = 2 2.0 ...
Page 5
TYPICAL STATIC CHARACTERISTICS 1000 T = 150°C J 25°C - 55°C 100 10 1.0 1 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0. COLLECTOR CURRENT (mA) C Figure 13. DC ...
Page 6
0. 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 0.001 0. COLLECTOR CURRENT (A) C Figure 15. Collector Emitter Saturation Voltage vs. Collector Current 1 ...
Page 7
... ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMBT3906LT1/D ° ...