MMBT3906LT1 ON Semiconductor, MMBT3906LT1 Datasheet - Page 5

• Manufacturer Part Number: MMBT3906LT1
• Description: TRANS SS GP PNP 40V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBT3906LT1

• Transistor Type: PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 225mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: PNP
• Power Dissipation Pd: 300mW
• Dc Collector Current: 200mA
• Dc Current Gain Hfe: 300
• Peak Reflow Compatible (260 C): No
• Leaded Process Compatible: No
• C-e Breakdown Voltage: -40V
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: MMBT3906LT1OSCT

1.0
0.8
0.6
0.4
0.2
1000
100
0
10
0.01
1.0
I
C
T
= 1.0 mA
- 55°C
J
25°C
= 150°C
0.02
0.03
0.05
0.07
TYPICAL STATIC CHARACTERISTICS
Figure 14. Collector Saturation Region
10 mA
0.1
10
Figure 13. DC Current Gain
I
http://onsemi.com
C
, COLLECTOR CURRENT (mA)
I
B
, BASE CURRENT (mA)
0.2
5
0.3
30 mA
0.5
0.7
1.0
100
2.0
3.0
100 mA
5.0
T
V
J
CE
= 25°C
7.0
= 1 V
1000
10