MMBT3906LT1 ON Semiconductor, MMBT3906LT1 Datasheet - Page 3

• Manufacturer Part Number: MMBT3906LT1
• Description: TRANS SS GP PNP 40V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBT3906LT1

• Transistor Type: PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 225mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: PNP
• Power Dissipation Pd: 300mW
• Dc Collector Current: 200mA
• Dc Current Gain Hfe: 300
• Peak Reflow Compatible (260 C): No
• Leaded Process Compatible: No
• C-e Breakdown Voltage: -40V
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: MMBT3906LT1OSCT

+0.5 V
10.6 V
7.0
5.0
3.0
2.0
1.0
10
500
300
200
100
70
50
30
20
10
7
5
0.1
1.0
0.2 0.3 0.5 0.7
2.0 3.0
< 1 ns
DUTY CYCLE = 2%
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 5. Turn −On Time
Figure 3. Capacitance
I
C
300 ns
, COLLECTOR CURRENT (mA)
5.0 7.0
REVERSE BIAS (VOLTS)
1.0
C
10
C
obo
10 k
ibo
2.0 3.0
t
d
@ V
20
TYPICAL TRANSIENT CHARACTERISTICS
OB
5.0 7.0 10
= 0 V
30
t
r
* Total shunt capacitance of test jig and connectors
@ V
3 V
50
CC
= 3.0 V
70
275
I
C
C
/I
100
S
B
20 30 40
http://onsemi.com
< 4 pF*
= 10
2.0 V
15 V
40 V
200
DUTY CYCLE = 2%
10 < t
3
T
T
1
J
J
500
300
200
100
5000
3000
2000
1000
= 25°C
= 125°C
< 500 ms
70
50
30
20
10
700
500
300
200
100
7
5
70
50
1.0
1.0
+9.1 V
0
V
I
C
CC
/I
2.0 3.0
B
Q
2.0 3.0
= 40 V
t
= 10
1
T
Figure 2. Storage and Fall Time
I
C
10.9 V
I
, COLLECTOR CURRENT (mA)
5.0 7.0
C
Figure 4. Charge Data
< 1 ns
Equivalent Test Circuit
, COLLECTOR CURRENT (mA)
Figure 6. Fall Time
5.0 7.0 10
10
1N916
I
10 k
C
/I
B
= 10
20
I
20
C
/I
B
30
= 20
30
50
3 V
50 70 100
Q
V
I
70
A
B1
CC
= I
275
100
= 40 V
C
B2
S
< 4 pF*
200
200