MT48LC4M32B2B5-7 IT:G Micron Technology Inc, MT48LC4M32B2B5-7 IT:G Datasheet - Page 32

• Manufacturer Part Number: MT48LC4M32B2B5-7 IT:G
• Description: DRAM Chip SDRAM 128M-Bit 4Mx32 3.3V 90-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC4M32B2B5-7 IT:G

• Density: 128 Mb
• Maximum Clock Rate: 143 MHz
• Package: 90VFBGA
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 3.3 V
• Maximum Random Access Time: 17|8|5.5 ns
• Operating Temperature: -40 to 85 °C
• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 128M (4Mx32)
• Speed: 143MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Package / Case: 90-VFBGA
• Organization: 4Mx32
• Address Bus: 14b
• Access Time (max): 17/8/5.5ns
• Operating Supply Voltage (typ): 3.3V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 175mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 23:
PRECHARGE
Power-Down
PDF: 09005aef80872800/Source: 09005aef80863355
128MbSDRAMx32_2.fm - Rev. L 1/09 EN
PRECHARGE Command
A0-A9, A11
The PRECHARGE command (Figure 23) is used to deactivate the open row in a partic-
ular bank or the open row in all banks. The bank(s) will be available for a subsequent row
access some specified time (
determines whether one or all banks are to be precharged, and in the case where only
one bank is to be precharged, inputs BA0 and BA1 select the bank. When all banks are to
be precharged, inputs BA0 and BA1 are treated as “Don’t Care.” Once a bank has been
precharged, it is in the idle state and must be activated prior to any READ or WRITE
commands being issued to that bank.
Power-down occurs if CKE is registered low coincident with a NOP or COMMAND
INHIBIT when no accesses are in progress (see Figure 24 on page 33). If power-down
occurs when all banks are idle, this mode is referred to as precharge power-down; if
power-down occurs when there is a row active in either bank, this mode is referred to as
active power-down. Entering power-down deactivates the input and output buffers,
excluding CKE, for maximum power savings while in standby. The device may not
remain in the power-down state longer than the refresh period (
refresh operations are performed in this mode.
The power-down state is exited by registering a NOP or COMMAND INHIBIT and CKE
HIGH at the desired clock edge (meeting
BA0,1
RAS#
CAS#
WE#
CKE
CLK
A10
CS#
HIGH
VALID ADDRESS
Bank Selected
All Banks
ADDRESS
BANK
t
RP) after the precharge command is issued. Input A10
32
DON’T CARE
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
CKS).
©2001 Micron Technology, Inc. All rights reserved.
128Mb: x32 SDRAM
Register Definition
t
REF or
t
REF
AT
) since no