MT47H128M8CF-3:H Micron Technology Inc, MT47H128M8CF-3:H Datasheet - Page 94

• Manufacturer Part Number: MT47H128M8CF-3:H
• Description: DRAM Chip DDR2 SDRAM 1G-Bit 128Mx8 1.8V 60-Pin FBGA Tray
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr
• Series: -r

Specifications of MT47H128M8CF-3:H

• Density: 1 Gb
• Maximum Clock Rate: 667 MHz
• Package: 60FBGA
• Address Bus Width: 17 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Random Access Time: 0.45 ns
• Operating Temperature: 0 to 85 °C
• Organization: 128Mx8
• Address Bus: 17b
• Access Time (max): 450ps
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 115mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 1G (128M x 8)
• Speed: 3ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Package / Case: 60-TFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 45: READ Latency
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. V 6/10 EN
Notes:
DQS, DQS#
DQS, DQS#
DQS, DQS#
Command
Command
Command
Address
Address
Address
1. DO n = data-out from column n.
2. BL = 4.
3. Three subsequent elements of data-out appear in the programmed order following
4. Shown with nominal
CK#
CK#
CK#
DQ
DQ
DQ
CK
CK
CK
DO n.
Bank a,
Bank a,
Bank a,
READ
READ
READ
Col n
Col n
Col n
T0
T0
T0
AL = 1
RL = 3 (AL = 0, CL = 3)
NOP
NOP
NOP
T1
T1
T1
t
AC,
RL = 4 (AL = 1 + CL = 3)
RL = 4 (AL = 0, CL = 4)
94
t
DQSCK, and
NOP
NOP
NOP
T2
T2
T2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
CL = 3
t
DQSQ.
1Gb: x4, x8, x16 DDR2 SDRAM
NOP
NOP
NOP
T3
T3
T3
DO
n
T3n
T3n
Transitioning Data
NOP
NOP
NOP
T4
T4
T4
© 2004 Micron Technology, Inc. All rights reserved.
DO
DO
n
n
T4n
T4n
T4n
T5
NOP
NOP
T5
NOP
T5
Don’t Care
T5n
READ