BCV 49 E6327 Infineon Technologies, BCV 49 E6327 Datasheet - Page 6

• Manufacturer Part Number: BCV 49 E6327
• Description: TRANSISTOR DARL NPN AF SOT-89
• Manufacturer: Infineon Technologies

Specifications of BCV 49 E6327

• Package / Case: SOT-89
• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 1W
• Frequency - Transition: 150MHz
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 80 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 2000
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BCV49E6327XT; SP000010882

Transition frequency f
V
Total power dissipation P
f
T
CE
MHz
mW
1200
10
10
10
800
600
400
200
5
= 5 V
10
3
2
1
0
0
BCV 29/49
0
15
30
45
10
1
60
T
75
=
90 105 120
tot
10
(I
= (T
C
2
)
mA
C
S
EHP00321
)
T
°C
S
10
150
3
6
Collector-base capacitance C
Emitter-base capacitance C
Permissible Pulse Load
P
P
P
tot max
tot
totmax
DC
pF
19
15
13
11
10
10
10
9
7
5
3
1
5
5
5
0
/P
2
1
0
10
BCV 29/49
totDC
-6
10
4
-5
=
10
(t
8
p
-4
CEB
D
D
)
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
=
=
t
T
10
p
12
BCV29, BCV49
-3
t
p
10
eb
-2
16
T
cb
2007-03-29
= (V
= (V
t
p
EHP00319
V
s
V
EB
CB
CCB
CB
)
/V
10
22
)
EB
0