BCV 49 E6327 Infineon Technologies, BCV 49 E6327 Datasheet - Page 2

• Manufacturer Part Number: BCV 49 E6327
• Description: TRANSISTOR DARL NPN AF SOT-89
• Manufacturer: Infineon Technologies

Specifications of BCV 49 E6327

• Package / Case: SOT-89
• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 1W
• Frequency - Transition: 150MHz
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 80 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 2000
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BCV49E6327XT; SP000010882

Thermal Resistance
Parameter
Junction - soldering point
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
1)
2
Symbol
R
thJS
Value
20
BCV29, BCV49
2007-03-29
Unit
K/W