BCV 49 E6327 Infineon Technologies, BCV 49 E6327 Datasheet - Page 5

• Manufacturer Part Number: BCV 49 E6327
• Description: TRANSISTOR DARL NPN AF SOT-89
• Manufacturer: Infineon Technologies

Specifications of BCV 49 E6327

• Package / Case: SOT-89
• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 1W
• Frequency - Transition: 150MHz
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 80 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 2000
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BCV49E6327XT; SP000010882

DC current gain h
V
h
Base-emitter saturation voltage
I
C
FE
C
CE
=
mA
10
10
10
10
10
10
10
10
5
5
5
5
5
= 5 V
10
6
5
4
3
3
2
1
0
(V
0
BCV 29/49
BCV 29/49
-1
BEsat
), h
10
0
125
-55 ˚C
FE
25 ˚C
1.0
FE
˚C
= 1000
=
10
1
(I
C
)
150
2.0
-50 ˚C
25 ˚C
10
˚C
V
2
BEsat
EHP00323
V
EHP00325
C
mA
10
3.0
3
5
Collector-emitter saturation voltage
I
Collector cutoff current I
V
C
CBO
C
CB
= (V
mA
10
10
10
10
5
5
= V
nA
3
2
1
0
10
10
10
10
10
0
BCV 29/49
4
3
2
1
0
CEsat
CEmax
0
BCV 29/49
), h
FE
0.5
50
= 1000
max
BCV29, BCV49
CBO
typ
1.0
100
=
2007-03-29
150
-50 ˚C
V
T
25 ˚C
(T
A
CEsat
˚C
V
EHP00322
EHP00318
˚C
A
)
150
1.5