BCW 67B E6327 Infineon Technologies, BCW 67B E6327 Datasheet - Page 5

• Manufacturer Part Number: BCW 67B E6327
• Description: TRANSISTOR PNP AF 32V SOT-23
• Manufacturer: Infineon Technologies

Specifications of BCW 67B E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Current - Collector (ic) (max): 800mA
• Voltage - Collector Emitter Breakdown (max): 32V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 100mA, 1V
• Power - Max: 330mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 200 MHz
• Collector- Emitter Voltage Vceo Max: 32 V
• Continuous Collector Current: 0.8 A
• Power Dissipation: 330 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BCW67BE6327XT; SP000015035

DC current gain h
V
h
Base-emitter saturation voltage
I
C
C
FE
CE
= (V
mA
10
10
10
10
10
10
10
10
10
= 1 V
5
5
5
5
5
5
-1
0
3
2
1
10
3
2
1
0
0
BCW 67/68
BCW 67/68
-1
100
-50
BEsat
25
˚C
˚C
˚C
5
), h
10
1
FE
0
150
-50
FE
25
= 10
5
˚C
˚C
˚C
= (I
10
2
1
C
)
5
10
3
2
V
C
BE sat
EHP00403
EHP00401
mA
V
10
4
3
5
Collector-emitter saturation voltage
I
Collector cutoff current I
V
C
C
CB0
CBO
mA
= (V
10
10
10
10
10
5
5
5
nA
10
10
10
10
10
10
0
5
5
5
5
3
2
1
-1
= 25 V
1
0
5
4
3
2
0
BCW 67/68
0
CEsat
BCW 67/68
), h
200
FE
150
-50
50
25
= 10
˚C
˚C
˚C
max
typ
400
BCW67, BCW68
CBO
100
= (T
600
2007-04-20
V
T
A
CE sat
˚C
EHP00402
EHP00400
mV
A
)
150
800