BCW 67B E6327 Infineon Technologies, BCW 67B E6327 Datasheet - Page 2

• Manufacturer Part Number: BCW 67B E6327
• Description: TRANSISTOR PNP AF 32V SOT-23
• Manufacturer: Infineon Technologies

Specifications of BCW 67B E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Current - Collector (ic) (max): 800mA
• Voltage - Collector Emitter Breakdown (max): 32V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 100mA, 1V
• Power - Max: 330mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 200 MHz
• Collector- Emitter Voltage Vceo Max: 32 V
• Continuous Collector Current: 0.8 A
• Power Dissipation: 330 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BCW67BE6327XT; SP000015035

Maximum Ratings
Parameter
Collector-emitter voltage
BCW67
BCW68
Collector-base voltage
BCW67
BCW68
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation, T
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
1)
S
79°C
2
Symbol
V
V
V
I
I
I
I
P
T
T
Symbol
R
C
CM
B
BM
j
stg
CEO
CBO
EBO
tot
thJS
-65 ... 150
Value
Value
800
100
200
330
150
32
45
45
60
215
BCW67, BCW68
5
1
2007-04-20
Unit
V
mA
A
mA
mW
°C
Unit
K/W