BCW 67B E6327 Infineon Technologies, BCW 67B E6327 Datasheet

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BCW 67B E6327

Manufacturer Part Number
BCW 67B E6327
Description
TRANSISTOR PNP AF 32V SOT-23
Manufacturer
Infineon Technologies
Datasheet

Specifications of BCW 67B E6327

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
PNP
Current - Collector (ic) (max)
800mA
Voltage - Collector Emitter Breakdown (max)
32V
Vce Saturation (max) @ Ib, Ic
700mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
160 @ 100mA, 1V
Power - Max
330mW
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Maximum Operating Frequency
200 MHz
Collector- Emitter Voltage Vceo Max
32 V
Continuous Collector Current
0.8 A
Power Dissipation
330 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BCW67BE6327XT
SP000015035
PNP Silicon AF Transistors
Type
BCW67A
BCW67B
BCW67C
BCW68F
BCW68G
BCW68H
1
Pb-containing package may be available upon special request
For general AF applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BCW66... (NPN)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
Marking
DAs
DBs
DCs
DFs
DGs
DHs
1)
1=B
1=B
1=B
1=B
1=B
1=B
1
Pin Configuration
2=E
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
3=C
3
BCW67, BCW68
Package
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
2007-04-20
1
2

Related parts for BCW 67B E6327

BCW 67B E6327 Summary of contents

Page 1

PNP Silicon AF Transistors For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW66... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type BCW67A BCW67B BCW67C BCW68F BCW68G BCW68H 1 Pb-containing package may be available ...

Page 2

Maximum Ratings Parameter Collector-emitter voltage BCW67 BCW68 Collector-base voltage BCW67 BCW68 Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation Junction temperature Storage temperature Thermal Resistance Parameter 1) Junction - soldering point ...

Page 3

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA BCW67 mA BCW68 C B Collector-base breakdown voltage µA, I ...

Page 4

DC Electrical Characteristics Parameter Characteristics Collector-emitter saturation voltage I = 100 mA 500 mA Base emitter saturation voltage I = 100 mA ...

Page 5

DC current gain BCW 67/ 100 ˚ ˚C -50 2 ˚ ...

Page 6

Transition frequency BCW 67/ MHz Total power dissipation P 550 mW 450 BCW66K BCW66 400 ...

Page 7

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0.25 B ...

Page 8

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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