BCW72LT1G ON Semiconductor, BCW72LT1G Datasheet - Page 6

• Manufacturer Part Number: BCW72LT1G
• Description: TRANS NPN GP 45V 100MA SOT-23
• Manufacturer: ON Semiconductor

Specifications of BCW72LT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 210mV @ 2.5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 225mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 0.1 A
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 225 mW
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 45V
• Collector-base Voltage: 50V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 200
• Frequency (max): 300MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

10
10
400
200
100
10
10
10
10
10
4.0
6.0
60
20
10
40
-1
-2
0.07
0.05
0.03
0.02
0.01
4
1
0
3
2
1.0
0.7
0.5
0.3
0.2
0.1
2.0
- 4
0
0.01
V
CC
- 2
0
0.02
= 30 Vdc
V
D = 0.5
0.01
CE
0
0.05
0.02
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
4.0
0.2
0.1
0.05
T
T
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
J
J
, JUNCTION TEMPERATURE (°C)
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160
= 150°C
0.1
6.0
T
Figure 19A.
A
Figure 20.
= 25°C
0.2
8.0 10
T
SINGLE PULSE
C
I
= 25°C
CEO
0.5
I
dc
CEX
1.0 ms
1.0
@ V
dc
100 ms
BE(off)
10 ms
2.0
I
AND
CBO
20
1.0 s
= 3.0 Vdc
Figure 19. Thermal Response
5.0
http://onsemi.com
10
40
t, TIME (ms)
6
20
as shown in Figure 19A. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 19 was calculated for various duty cycles.
steady state value R
Example:
The MPS3904 is dissipating 2.0 watts peak under the following
conditions:
Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.
The peak rise in junction temperature is therefore
For more information, see AN−569.
transistor that must be observed for reliable operation. Collector load
lines for specific circuits must fall below the limits indicated by the
applicable curve.
variable depending upon conditions. Pulse curves are valid for duty
cycles to 10% provided T
the data in Figure 19. At high case or ambient temperatures, thermal
limitations will reduce the power that can be handled to values less
than the limitations imposed by second breakdown.
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model
To find Z
t
DT = r(t) x P
The safe operating area curves indicate I
The data of Figure 20 is based upon T
1
= 1.0 ms, t
50
qJA(t)
100 200
P
(pk)
(pk)
2
, multiply the value obtained from Figure 19 by the
= 5.0 ms. (D = 0.2)
x R
qJA
qJA
FIGURE 19A
t
1
.
500 1.0 k 2.0 k
J(pk)
t
= 0.22 x 2.0 x 200 = 88°C.
2
≤ 150°C. T
DUTY CYCLE, D = t
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
Z
T
qJA(t)
J(pk)
J(pk)
− T
J(pk)
= r(t) • R
5.0 k 10 k 20 k
A
may be calculated from
= P
= 150°C; T
C
−V
(pk)
qJA
1
CE
Z
(SEE AN−569)
qJA(t)
1
/t
limits of the
2
C
or T
50 k 1 00 k
A
is