BCW72LT1G ON Semiconductor, BCW72LT1G Datasheet - Page 5

• Manufacturer Part Number: BCW72LT1G
• Description: TRANS NPN GP 45V 100MA SOT-23
• Manufacturer: ON Semiconductor

Specifications of BCW72LT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 210mV @ 2.5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 225mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 0.1 A
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 225 mW
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 45V
• Collector-base Voltage: 50V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 200
• Frequency (max): 300MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

300
200
100
7.0
5.0
3.0
70
50
30
20
10
500
300
200
100
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
70
50
20
10
1.0
0.1
0.5
Figure 15. Current−Gain — Bandwidth Product
T
f = 100 MHz
J
0.7 1.0
= 25°C
0.2
2.0
t
d
3.0
@ V
0.5
Figure 17. Input Impedance
Figure 13. Turn−On Time
I
C
I
I
, COLLECTOR CURRENT (mA)
C
C
BE(off)
2.0
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
V
5.0
CE
1.0
= 20 V
= 0.5 Vdc
3.0
h
7.0
fe
2.0
≈ 200 @ I
5.0 V
10
5.0 7.0
t
r
5.0
C
TYPICAL DYNAMIC CHARACTERISTICS
= 1.0 mA
20
10
10
30
V
I
T
20
C
J
CC
/I
V
f = 1.0 kHz
T
20
= 25°C
B
A
CE
50
= 3.0 V
= 10
= 25°C
= 10 Vdc
http://onsemi.com
30
50
70
100
100
50
5
1000
700
500
300
200
100
200
100
7.0
5.0
3.0
2.0
1.0
7.0
5.0
3.0
2.0
70
50
30
20
10
10
70
50
30
20
10
0.05
0.1
1.0
V
I
I
T
V
f = 1.0 kHz
T
C
B1
A
CC
J
CE
/I
= 25°C
= 25°C
B
= I
0.1
0.2
= 3.0 V
= 10 Vdc
= 10
B2
2.0
0.2
t
Figure 18. Output Admittance
f
h
3.0
0.5
fe
t
s
Figure 14. Turn−Off Time
V
≈ 200 @ I
I
Figure 16. Capacitance
I
C
C
R
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
, REVERSE VOLTAGE (VOLTS)
0.5
1.0
5.0
C
7.0
1.0
2.0
= 1.0 mA
10
C
C
2.0
ib
ob
5.0
20
5.0
10
30
20
10
T
f = 1.0 MHz
J
50
= 25°C
20
50
70 100
100
50