BCW72LT1G ON Semiconductor, BCW72LT1G Datasheet - Page 2

• Manufacturer Part Number: BCW72LT1G
• Description: TRANS NPN GP 45V 100MA SOT-23
• Manufacturer: ON Semiconductor

Specifications of BCW72LT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 210mV @ 2.5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 225mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 0.1 A
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 225 mW
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 45V
• Collector-base Voltage: 50V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 200
• Frequency (max): 300MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

DUTY CYCLE = 2%
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
Base −Emitter On Voltage
Current −Gain − Bandwidth Product
Output Capacitance
Input Capacitance
Noise Figure
(I
(I
(I
(I
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
C
C
C
E
C
C
C
C
C
C
E
E
C
CB
CB
= 10 mAdc, I
= 0, V
= 0, V
= 2.0 mAdc, V
= 2.0 mAdc, V
= 10 mAdc, I
= 2.0 mAdc, V
= 10 mAdc, I
= 50 mAdc, I
= 50 mAdc, I
= 2.0 mAdc, V
= 10 mAdc, V
= 0.2 mAdc, V
- 0.5 V
= 20 Vdc, I
= 20 Vdc, I
300 ns
CB
CB
<1.0 ns
= 10 Vdc, f = 1.0 MHz)
= 10 Vdc, f = 1.0 MHz)
Figure 1. Turn−On Time
C
E
B
B
B
E
E
CE
= 0)
= 0)
EB
EB
CE
CE
CE
= 0.5 mAdc)
= 2.5 mAdc)
= 2.5 mAdc)
= 0)
= 0, T
= 5.0 Vdc, f = 100 MHz)
= 0)
= 0)
= 5.0 Vdc)
= 5.0 Vdc)
= 5.0 Vdc, R
+10.9 V
A
= 100°C)
Characteristic
EQUIVALENT SWITCHING TIME TEST CIRCUITS
S
10 k
= 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
(T
A
= 25°C unless otherwise noted)
+ 3.0 V
*Total shunt capacitance of test jig and connectors
C
275
S
< 4.0 pF*
http://onsemi.com
DUTY CYCLE = 2%
10 < t
2
1
< 500 ms
- 9.1 V
V
V
V
V
0
Symbol
V
V
V
(BR)CEO
(BR)CES
(BR)CBO
(BR)EBO
CE(sat)
I
BE(sat)
C
BE(on)
C
h
CBO
NF
f
obo
FE
ibo
T
t
1
Figure 2. Turn−Off Time
< 1.0 ns
+10.9 V
Min
200
5.0
0.6
45
45
50
−
−
−
−
−
−
−
−
−
10 k
1N916
0.21
0.85
Typ
300
9.0
−
−
−
−
−
−
−
−
−
−
−
Max
0.25
0.75
+ 3.0 V
100
450
4.0
10
10
−
−
−
−
−
−
−
−
C
275
S
< 4.0 pF*
nAdc
mAdc
Unit
MHz
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
dB
pF
pF
−