BCW72LT1G ON Semiconductor, BCW72LT1G Datasheet

TRANS NPN GP 45V 100MA SOT-23

BCW72LT1G

Manufacturer Part Number
BCW72LT1G
Description
TRANS NPN GP 45V 100MA SOT-23
Manufacturer
ON Semiconductor
Datasheet

Specifications of BCW72LT1G

Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
210mV @ 2.5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Power - Max
225mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.1 A
Maximum Dc Collector Current
0.1 A
Power Dissipation
225 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
200 at 2 mA at 5 V
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Collector-emitter Voltage
45V
Collector-base Voltage
50V
Emitter-base Voltage
5V
Collector Current (dc) (max)
100mA
Dc Current Gain (min)
200
Frequency (max)
300MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BCW72LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
BCW72LT1G
Manufacturer:
STACKPOLE
Quantity:
4 856
Company:
Part Number:
BCW72LT1G
Quantity:
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BCW72LT1G
General Purpose Transistor
NPN Silicon
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 3
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Total Device Dissipation FR−5 Board,
(Note 1) T
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2) T
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
A
= 25°C
Characteristic
Rating
A
= 25°C
Symbol
Symbol
T
V
V
V
R
R
J
P
P
CEO
CBO
EBO
, T
I
qJA
qJA
C
D
D
stg
−55 to +150
Value
Max
100
225
556
300
417
5.0
1.8
2.4
45
50
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
mW
°C
†For information on tape and reel specifications,
BCW72LT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
Device
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
ORDERING INFORMATION
MARKING DIAGRAM
K2 = Device Code
M
G
http://onsemi.com
BASE
SOT−23 (TO−236)
1
1
= Date Code*
= Pb−Free Package
(Pb−Free)
1
Package
SOT−23
CASE 318
STYLE 6
K2 M G
COLLECTOR
2
G
Publication Order Number:
EMITTER
3
2
3
3,000 / Tape & Reel
Shipping
BCW72LT1/D

Related parts for BCW72LT1G

BCW72LT1G Summary of contents

Page 1

... P D 300 mW 2.4 mW/°C R 417 °C/W qJA −55 to +150 °C J stg BCW72LT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER SOT−23 (TO−236) ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I = 2.0 mAdc Collector −Emitter Breakdown Voltage (I = 2.0 mAdc Collector −Base Breakdown Voltage ( mAdc, I ...

Page 3

TYPICAL NOISE CHARACTERISTICS 1.0 mA BANDWIDTH = 1 300 mA 10 7.0 100 mA 5 3.0 2 100 200 500 FREQUENCY (Hz) Figure 3. Noise ...

Page 4

TYPICAL STATIC CHARACTERISTICS 400 200 100 0.004 0.006 0.01 0.02 0.03 0.05 0.07 0.1 1 0.6 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 ...

Page 5

TYPICAL DYNAMIC CHARACTERISTICS 300 200 100 0.5 Vdc d BE(off) 10 7.0 5.0 3.0 1.0 2.0 3.0 5.0 7 COLLECTOR CURRENT (mA) C Figure 13. Turn−On ...

Page 6

D = 0.5 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.05 0.02 0.03 0.01 0.02 SINGLE PULSE 0.01 0.01 0.02 0.05 0.1 0.2 0 Vdc CEO ...

Page 7

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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