MMBT4401LT3G ON Semiconductor, MMBT4401LT3G Datasheet - Page 6

• Manufacturer Part Number: MMBT4401LT3G
• Description: TRANS NPN GP 40V 600MA SOT-23
• Manufacturer: ON Semiconductor

Specifications of MMBT4401LT3G

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 1V
• Power - Max: 225mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 60V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 600mA
• Power Dissipation: 300mW
• Frequency (max): 250MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant

0.001
0.01
21
19
17
15
13
11
0.1
9
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
1
0
1
Figure 17. Base−Emitter Saturation Voltage vs.
0.0001
Figure 19. Input Capacitance vs. Emitter Base
I
C
/I
−55°C
150°C
V
25°C
B
CE
1
= 10
V
Figure 21. Safe Operating Area
, COLLECTOR EMITTER VOLTAGE (V)
eb
0.001
, EMITTER BASE VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
2
Collector Current
1 sec
Voltage
3
10
0.01
10 msec
4
STATIC CHARACTERISTICS
0.1
5
http://onsemi.com
100
6
1
6
1000
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
8.5
7.5
6.5
5.5
4.5
3.5
2.5
1.5
10
0.1
0.0001
0
V
Figure 22. Current−Gain−Bandwidth Product
Figure 18. Base−Emitter Turn On Voltage vs.
T
Figure 20. Output Capacitance vs. Collector
CE
V
A
CE
5
−55°C
150°C
= 25°C
= 1.0 V
25°C
= 2.0 V
V
10
cb
I
0.001
C
, COLLECTOR BASE VOLTAGE (V)
I
C
, COLLECTOR CURRENT (mA)
1
, COLLECTOR CURRENT (A)
15
Collector Current
Base Voltage
20
0.01
10
25
30
35
100
0.1
40
45
1000
50
1