MMBT4401LT3G ON Semiconductor, MMBT4401LT3G Datasheet

TRANS NPN GP 40V 600MA SOT-23

MMBT4401LT3G

Manufacturer Part Number
MMBT4401LT3G
Description
TRANS NPN GP 40V 600MA SOT-23
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMBT4401LT3G

Transistor Type
NPN
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
750mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 1V
Power - Max
225mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
40V
Collector-base Voltage
60V
Emitter-base Voltage
6V
Collector Current (dc) (max)
600mA
Power Dissipation
300mW
Frequency (max)
250MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Compliant

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Part Number
Manufacturer
Quantity
Price
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MMBT4401LT3G
Manufacturer:
ON Semiconductor
Quantity:
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MMBT4401LT3G
Manufacturer:
ON
Quantity:
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MMBT4401LT1G
Switching Transistor
NPN Silicon
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*Transient pulses must not cause the junction temperature to be exceeded.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2010
July, 2010 − Rev. 9
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Collector Current − Peak
Total Device Dissipation FR− 5 Board
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(Note 1) @T
Derate above 25°C
Substrate (Note 2) @T
Derate above 25°C
Characteristic
A
Rating
= 25°C
A
= 25°C
Symbol
Symbol
T
V
V
V
R
R
J
I
P
P
CEO
CBO
EBO
, T
CM
I
qJA
qJA
C
D
D
stg
−55 to +150
Value
Max
600
900
225
556
300
417
6.0
1.8
2.4
40
60
1
mW/°C
mW/°C
mAdc
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
mW
°C
†For information on tape and reel specifications,
MMBT4401LT1G
MMBT4401LT3G SOT−23
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
Device
1
ORDERING INFORMATION
2X = Specific Device Code
M
G
2
MARKING DIAGRAM
BASE
http://onsemi.com
http://onsemi.com
1
= Date Code*
= Pb−Free Package
3
1
(Pb−Free)
(Pb−Free)
Package
SOT−23
COLLECTOR
2X M G
EMITTER
G
Publication Order Number:
SOT−23 (TO−236)
3
2
CASE 318
STYLE 6
10,000 Tape & Reel
3000 Tape & Reel
MMBT4401LT1/D
Shipping

Related parts for MMBT4401LT3G

MMBT4401LT3G Summary of contents

Page 1

... R 417 °C/W qJA −55 to +150 °C J stg MMBT4401LT1G MMBT4401LT3G SOT−23 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com http://onsemi.com COLLECTOR 3 1 BASE ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3) Collector −Base Breakdown Voltage Emitter −Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current ON CHARACTERISTICS (Note 3) DC Current Gain Collector −Emitter Saturation Voltage Base −Emitter Saturation Voltage ...

Page 3

I , COLLECTOR CURRENT (mA) C ...

Page 4

SMALL−SIGNAL CHARACTERISTICS 10 = 150 1.0 mA 500 mA 200 8.0 = 100 ...

Page 5

T = 150°C J 400 350 25°C 300 250 200 - 55°C 150 100 50 0 0.01 1.2 1 0.6 0.4 0.2 0 0.001 0.01 0. ...

Page 6

1.0 0.9 −55°C 0.8 0.7 25°C 0.6 0.5 150°C 0.4 0.3 0.0001 0.001 0. COLLECTOR CURRENT (A) C Figure 17. Base−Emitter Saturation Voltage vs. Collector Current ...

Page 7

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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