MMBT4401LT3G ON Semiconductor, MMBT4401LT3G Datasheet - Page 3

• Manufacturer Part Number: MMBT4401LT3G
• Description: TRANS NPN GP 40V 600MA SOT-23
• Manufacturer: ON Semiconductor

Specifications of MMBT4401LT3G

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 1V
• Power - Max: 225mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 60V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 600mA
• Power Dissipation: 300mW
• Frequency (max): 250MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant

100
300
200
100
7.0
5.0
70
50
30
20
10
70
50
30
10
10
20
20
Figure 4. Turn−On Time
I
I
30
30
Figure 6. Storage Time
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
50
50
70
70
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
10
100
100
10
t
t
t
t
r
r
d
d
V
I
@ V
@ V
@ V
@ V
C
t
I
I
CC
/I
s
B1
C
′ = t
B
/I
TRANSIENT CHARACTERISTICS
CC
CC
B
= 30 V
= I
= 10
EB
EB
200
200
20
I
= 10 to 20
s
C
B2
= 30 V
= 10 V
= 2.0 V
= 0
/I
- 1/8 t
B
= 10
300
300
I
30
C
Figure 3. Charge Data
f
, COLLECTOR CURRENT (mA)
http://onsemi.com
25°C
500
500
50
3
70
100
100
100
7.0
7.0
5.0
5.0
70
50
30
20
10
70
50
30
20
10
Q
10
10
T
100°C
200
20
20
t
f
Figure 5. Rise and Fall Times
300
Q
I
A
C
I
I
30
30
C
/I
C
t
r
B
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
Figure 7. Fall Time
= 10
500
50
50
I
C
70 100
/I
70
B
= 20
100
200
200
V
I
C
V
I
CC
B1
/I
CC
B
= I
= 30 V
= 10
= 30 V
B2
300
300
500
500