MJD117T4 STMicroelectronics, MJD117T4 Datasheet - Page 4
MJD117T4
Manufacturer Part Number
MJD117T4
Description
TRANS PWR DARL SILICON D-PAK
Manufacturer
STMicroelectronics
Datasheet
1.MJD112T4.pdf
(10 pages)
Specifications of MJD117T4
Transistor Type
PNP - Darlington
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
3V @ 40mA, 4A
Current - Collector Cutoff (max)
20µA
Dc Current Gain (hfe) (min) @ Ic, Vce
1000 @ 2A, 3V
Power - Max
20W
Frequency - Transition
25MHz
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6464-2
MJD117T4ST
MJD117T4ST
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MJD117T4G
Manufacturer:
ON
Quantity:
12 500
Part Number:
MJD117T4G
Manufacturer:
ON/安森美
Quantity:
20 000
2.1
4/10
Typical characteristic (curves)
Figure 2.
Figure 4.
Figure 6.
DC current gain
(V
DC current gain
(V
Collector-emitter saturation
voltage (NPN)
CE
CE
= 3 V NPN)
= 5 V NPN)
Doc ID 3540 Rev 3
Figure 3.
Figure 5.
Figure 7.
DC current gain
(V
DC current gain
(V
Collector-emitter saturation
voltage (PNP)
CE
CE
= - 3 V PNP)
= - 5 V PNP)