MJD117T4 STMicroelectronics, MJD117T4 Datasheet - Page 3

• Manufacturer Part Number: MJD117T4
• Description: TRANS PWR DARL SILICON D-PAK
• Manufacturer: STMicroelectronics

Specifications of MJD117T4

• Transistor Type: PNP - Darlington
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 3V @ 40mA, 4A
• Current - Collector Cutoff (max): 20µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 1000 @ 2A, 3V
• Power - Max: 20W
• Frequency - Transition: 25MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6464-2; MJD117T4ST

2
Note:
Electrical characteristics
T
Table 4.
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %
For PNP types voltage and current values are negative.
V
case
V
V
CEO(sus)
Symbol
V
CE(sat)
BE(sat)
h
C
I
I
I
I
BE(on)
CEV
CBO
CEO
EBO
FE
CBO
f
= 25 °C; unless otherwise specified.
T
(1)
(1)
(1)
(1)
Electrical characteristics
Collector cut-off current
(V
Collector cut-off current
(I
Collector cut-off current
(I
Emitter cut-off current
(I
Collector-emitter
sustaining voltage (I
Collector-emitter saturation
voltage
Base-emitter saturation
voltage
Base-emitter on voltage
DC current gain
Transition frequency
Collector base capacitance
(I
E
B
C
E
BE
= 0)
= 0)
= 0)
= 0)
= -1.5 V)
Parameter
Doc ID 3540 Rev 3
B
= 0)
V
V
V
V
V
V
I
I
I
I
I
I
I
I
I
f = 1 MHz
V
for MJD112
for MJD117
C
C
C
C
C
C
C
C
C
CE
CE
CB
CB
CE
EB
CB
= 0.75
= 2 A
= 4 A
= 4 A
= 2 A
= 0.5
= 2
= 4
= 30 mA
= 5 V
= 80 V
= 80 V, T
= 80 V
= 100 V
= 50 V
= 10 V
Test conditions
A_
A_ _
A_ _
A_
c
f = 0.1 MHz
V
= 125 °C
I
I
V
V
V
I
V
B
B
CE
B
CE
CE
CE
CE
= 40 mA
= 40 mA
= 8 mA
= 10 V
= 3 V
= 3 V
= 3 V
= 3 V
1000
Min.
100
500
200
25
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
12000
Max.
100
200
0.5
2.8
10
10
20
20
2
2
3
4
MHz
Unit
mA
mA
µA
µA
µA
pF
pF
3/10
V
V
V
V