MJD117T4 STMicroelectronics, MJD117T4 Datasheet - Page 2
MJD117T4
Manufacturer Part Number
MJD117T4
Description
TRANS PWR DARL SILICON D-PAK
Manufacturer
STMicroelectronics
Datasheet
1.MJD112T4.pdf
(10 pages)
Specifications of MJD117T4
Transistor Type
PNP - Darlington
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
3V @ 40mA, 4A
Current - Collector Cutoff (max)
20µA
Dc Current Gain (hfe) (min) @ Ic, Vce
1000 @ 2A, 3V
Power - Max
20W
Frequency - Transition
25MHz
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6464-2
MJD117T4ST
MJD117T4ST
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MJD117T4G
Manufacturer:
ON
Quantity:
12 500
Part Number:
MJD117T4G
Manufacturer:
ON/安森美
Quantity:
20 000
1
Note:
2/10
Absolute maximum ratings
Table 2.
For PNP types voltage and current values are negative.
Table 3.
Symbol
R
Symbol
thJC
V
V
V
P
T
I
CBO
CEO
EBO
STG
T
I
CM
TOT
I
C
B
J
Thermal resistance junction-case max.
Absolute maximum ratings
Thermal data
Collector-base voltage (I
Collector-emitter voltage (I
Emitter-base voltage (I
Collector current
Collector peak current
Base current
Total dissipation at T
Storage temperature
Max. operating junction temperature
Parameter
Doc ID 3540 Rev 3
case
C
Parameter
E
= 0)
= 25 °C
= 0)
B
= 0)
Value
6.25
-65 to 150
Value
0.05
100
150
20
5
2
4
°C/W
Unit
Unit
°C
°C
W
V
V
A
A
A