PZTA42,115 NXP Semiconductors, PZTA42,115 Datasheet - Page 2

• Manufacturer Part Number: PZTA42,115
• Description: TRANS NPN 300V 100MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of PZTA42,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1.2W
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 300V
• Transistor Type: NPN
• Frequency - Transition: 50MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 10V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 2mA, 20mA
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 300 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 1200 mW
• Maximum Operating Frequency: 50 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933982060115::PZTA42 T/R::PZTA42 T/R

NXP Semiconductors
FEATURES
• Low current (max. 100 mA)
• High voltage (max. 300 V).
APPLICATIONS
• Telephony and professional communication equipment.
DESCRIPTION
NPN high-voltage transistor in a SOT223 plastic package.
PNP complement: PZTA92.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
1999 May 21
V
V
V
I
I
I
P
T
T
T
C
CM
BM
SYMBOL
stg
j
amb
CBO
CEO
EBO
tot
NPN high-voltage transistor
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
PARAMETER
open emitter
open base
open collector
T
amb
≤ 25 °C; note 1
2
CONDITIONS
PINNING
handbook, halfpage
Fig.1 Simplified outline (SOT223) and symbol.
PIN
2,4
1
3
Top view
1
base
collector
emitter
2
4
−
−
−
−
−
−
−
−65
−
−65
3
MIN.
DESCRIPTION
MAM287
300
300
6
100
200
100
1.2
+150
150
+150
Product data sheet
1
MAX.
PZTA42
2, 4
3
V
V
V
mA
mA
mA
W
°C
°C
°C
2
.
UNIT