PZTA14,115 NXP Semiconductors, PZTA14,115 Datasheet - Page 2

• Manufacturer Part Number: PZTA14,115
• Description: TRANS NPN 30V 500MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of PZTA14,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 100mA, 5V
• Power - Max: 1.25W
• Frequency - Transition: 125MHz
• Mounting Type: Surface Mount
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 30 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 30V
• Collector-base Voltage(max): 30V
• Emitter-base Voltage (max): 10V
• Collector-emitter Saturation Voltage: 1.5@0.1mA@100mAV
• Collector Current (dc) (max): 500mA
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933982050115; PZTA14 T/R; PZTA14 T/R

NXP Semiconductors
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 30 V).
APPLICATIONS
• Pre-amplifiers requiring high input impedance.
DESCRIPTION
NPN Darlington transistor in a SOT223 plastic package.
PNP complement: PZTA64.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
1999 Apr 14
V
V
V
I
I
I
P
T
T
T
C
CM
B
SYMBOL
stg
j
amb
CBO
CES
EBO
tot
NPN Darlington transistor
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
PARAMETER
open emitter
V
open collector
T
amb
BE
= 0
≤ 25 °C; note 1
2
CONDITIONS
PINNING
handbook, halfpage
PIN
2, 4
Fig.1 Simplified outline (SOT223) and symbol.
1
3
Top view
1
base/input
collector/output
emitter/ground
2
4
3
−
−
−
−
−
−
−
−65
−
−65
MIN.
DESCRIPTION
30
30
10
500
800
200
1.25
+150
150
+150
MAM319
1
Product data sheet
MAX.
TR1
PZTA14
2, 4
3
TR2
V
V
V
mA
mA
mA
W
°C
°C
°C
2
.
UNIT