PMBT2369,215 NXP Semiconductors, PMBT2369,215 Datasheet - Page 4
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PMBT2369,215
Manufacturer Part Number
PMBT2369,215
Description
TRANS NPN SW 200MA 15V SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.PMBT2369235.pdf
(7 pages)
Specifications of PMBT2369,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
15V
Vce Saturation (max) @ Ib, Ic
250mV @ 1mA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 10mA, 1V
Power - Max
250mW
Frequency - Transition
500MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.2 A
Power Dissipation
250 mW
Maximum Operating Frequency
500 MHz
Maximum Operating Temperature
+ 150 C
Number Of Elements
1
Collector-emitter Voltage
15V
Collector-base Voltage
40V
Emitter-base Voltage
5V
Collector Current (dc) (max)
200mA
Dc Current Gain (min)
40
Frequency (max)
500MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
TO-236AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1739-2
933828890215
PMBT2369 T/R
933828890215
PMBT2369 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMBT2369,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
2004 Jan 22
handbook, full pagewidth
NPN switching transistor
V
R1 = 56 Ω; R2 = 1 kΩ; R
V
Oscilloscope input impedance Z
i
BB
= 0.5 to 4.2 V; T = 500 µs; t
= 0.2 V; V
CC
= 2.7 V.
B
= 1 kΩ; R
p
= 10 µs; t
i
= 50 Ω.
C
= 270 Ω.
oscilloscope
r
= t
f
≤ 3 ns.
V i
Fig.2 Test circuit for switching times.
(probe)
450 Ω
R1
R2
R B
V BB
4
R C
V CC
DUT
V o
MLB826
(probe)
450 Ω
oscilloscope
PMBT2369
Product data sheet