PMBT2369,215 NXP Semiconductors, PMBT2369,215 Datasheet - Page 3
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PMBT2369,215
Manufacturer Part Number
PMBT2369,215
Description
TRANS NPN SW 200MA 15V SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.PMBT2369235.pdf
(7 pages)
Specifications of PMBT2369,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
15V
Vce Saturation (max) @ Ib, Ic
250mV @ 1mA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 10mA, 1V
Power - Max
250mW
Frequency - Transition
500MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.2 A
Power Dissipation
250 mW
Maximum Operating Frequency
500 MHz
Maximum Operating Temperature
+ 150 C
Number Of Elements
1
Collector-emitter Voltage
15V
Collector-base Voltage
40V
Emitter-base Voltage
5V
Collector Current (dc) (max)
200mA
Dc Current Gain (min)
40
Frequency (max)
500MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
TO-236AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1739-2
933828890215
PMBT2369 T/R
933828890215
PMBT2369 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMBT2369,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
2004 Jan 22
R
I
I
h
V
V
C
f
Switching times (between 10% and 90% levels); (see Fig.2)
t
t
t
t
t
t
j
CBO
EBO
T
on
d
r
off
s
f
SYMBOL
SYMBOL
FE
= 25 °C unless otherwise specified.
CEsat
BEsat
NPN switching transistor
th(j-a)
c
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
transition frequency
turn-on time
delay time
rise time
turn-off time
storage time
fall time
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
I
I
I
I
E
E
C
C
C
C
C
C
E
C
Con
Boff
= 0; V
= 0; V
= I
= 0; V
= 10 mA; V
= 10 mA; V
= 100 mA; V
= 10 mA; I
= 10 mA; I
= 10 mA; V
= −1.5 mA
= 10 mA; I
e
= 0; V
3
CB
CB
EB
= 20 V
= 20 V; T
= 4 V
CONDITIONS
CB
B
B
CE
CE
CE
= 1 mA
= 1 mA
Bon
CE
note 1
= 5 V; f = 1 MHz
= 1 V
= 1 V; T
= 10 V; f = 100 MHz
= 2 V
= 3 mA;
CONDITIONS
j
= 125 °C
amb
= −55 °C
−
−
−
40
20
20
−
700
−
500
−
−
−
−
−
−
MIN.
VALUE
500
PMBT2369
Product data sheet
400
30
100
120
−
−
250
850
4
−
10
4
6
20
10
10
MAX.
UNIT
K/W
nA
µA
nA
mV
mV
pF
MHz
ns
ns
ns
ns
ns
ns
UNIT