PMBT2369,215 NXP Semiconductors, PMBT2369,215 Datasheet - Page 2
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PMBT2369,215
Manufacturer Part Number
PMBT2369,215
Description
TRANS NPN SW 200MA 15V SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.PMBT2369235.pdf
(7 pages)
Specifications of PMBT2369,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
15V
Vce Saturation (max) @ Ib, Ic
250mV @ 1mA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 10mA, 1V
Power - Max
250mW
Frequency - Transition
500MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.2 A
Power Dissipation
250 mW
Maximum Operating Frequency
500 MHz
Maximum Operating Temperature
+ 150 C
Number Of Elements
1
Collector-emitter Voltage
15V
Collector-base Voltage
40V
Emitter-base Voltage
5V
Collector Current (dc) (max)
200mA
Dc Current Gain (min)
40
Frequency (max)
500MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
TO-236AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1739-2
933828890215
PMBT2369 T/R
933828890215
PMBT2369 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMBT2369,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
FEATURES
• Low current (max. 200 mA)
• Low voltage (max. 15 V).
APPLICATIONS
• High-speed switching, especially in portable equipment.
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
MARKING
Note
1. * = p : Made in Hong Kong.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 22
PMBT2369
PMBT2369
V
V
V
I
I
I
P
T
T
T
C
CM
BM
NUMBER
SYMBOL
stg
j
amb
CBO
CEO
EBO
tot
NPN switching transistor
* = t : Made in Malaysia.
* = W : Made in China.
TYPE
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
NAME
−
PARAMETER
plastic surface mounted package; 3 leads
MARKING CODE
*1J
(1)
open emitter
open base
open collector
T
amb
DESCRIPTION
2
≤ 25 °C; note 1
PACKAGE
PINNING
handbook, halfpage
CONDITIONS
PIN
1
2
3
Fig.1 Simplified outline (SOT23) and symbol.
Top view
base
emitter
collector
1
3
DESCRIPTION
2
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAM255
Product data sheet
PMBT2369
1
40
15
5
200
300
100
250
+150
150
+150
MAX.
VERSION
SOT23
3
2
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT