PBSS4350X,115 NXP Semiconductors, PBSS4350X,115 Datasheet - Page 7

• Manufacturer Part Number: PBSS4350X,115
• Description: TRANS NPN 50V 3A SOT89
• Manufacturer: NXP Semiconductors

Specifications of PBSS4350X,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Type: NPN
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 370mV @ 300mA, 3A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 1A, 2V
• Power - Max: 1.6W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 1600 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4159-2; 934055628115; PBSS4350X T/R; PBSS4350X T/R

Philips Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Nov 04
I
I
I
h
V
R
V
V
f
C
SYMBOL
amb
CBO
CES
EBO
T
FE
CEsat
BEsat
BEon
CEsat
c
50 V, 3 A
NPN low V
= 25 C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
p
CEsat
300 s;
PARAMETER
(BISS) transistor
0.02.
V
V
V
V
V
I
I
I
I
I
I
I
I
V
I
V
C
C
C
C
C
C
C
C
C
CB
CB
CE
EB
CE
CE
CB
I
I
I
I
I
= 0.5 A; I
= 1 A; I
= 2 A; I
= 2 A; I
= 3 A; I
= 2 A; I
= 2 A; I
= 3 A; I
= 100 mA; V
C
C
C
C
C
= 50 V; I
= 50 V; I
= 50 V; V
= 5 V; I
= 2 V
= 2 V; I
= 10 V; I
= 0.1 A
= 0.5 A
= 1 A; note 1
= 2 A; note 1
= 3 A; note 1
B
B
B
B
B
B
B
= 50 mA
= 100 mA
= 200 mA; note 1
= 300 mA; note 1
= 200 mA; note 1
= 100 mA
= 300 mA; note 1
CONDITIONS
C
B
C
7
E
E
E
= 0 A
= 50 mA
= 1 A
BE
= 0 A
= 0 A; T
= i
CE
= 0 V
e
= 5 V; f = 100 MHz 100
= 0 A; f = 1 MHz
j
= 150 C
300
300
300
200
100
1.1
MIN.
100
TYP.
PBSS4350X
Product specification
100
50
100
100
700
80
160
280
260
370
130
1.1
1.2
25
MAX.
nA
nA
nA
mV
mV
mV
mV
mV
m
V
V
V
MHz
pF
UNIT
A