PBSS4350X,115 NXP Semiconductors, PBSS4350X,115 Datasheet - Page 4

• Manufacturer Part Number: PBSS4350X,115
• Description: TRANS NPN 50V 3A SOT89
• Manufacturer: NXP Semiconductors

Specifications of PBSS4350X,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Type: NPN
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 370mV @ 300mA, 3A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 1A, 2V
• Power - Max: 1.6W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 1600 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4159-2; 934055628115; PBSS4350X T/R; PBSS4350X T/R

Philips Semiconductors
2004 Nov 04
handbook, halfpage
50 V, 3 A
NPN low V
(1) Ceramic PCB; 7 cm
(2) FR4 PCB; 6 cm
P tot
(W)
1.6
1.2
0.8
0.4
mounting pad for collector.
mounting pad for collector.
2
0
0
(1)
(2)
(3)
(4)
Fig.2 Power derating curves.
2
40
CEsat
copper
2
(BISS) transistor
80
(3) FR4 PCB; 1 cm
(4) Standard footprint.
mounting pad for collector.
120
T amb ( C)
MLE186
2
copper
160
4
PBSS4350X
Product specification