PBSS4350X,115 NXP Semiconductors, PBSS4350X,115 Datasheet - Page 6

TRANS NPN 50V 3A SOT89

PBSS4350X,115

Manufacturer Part Number
PBSS4350X,115
Description
TRANS NPN 50V 3A SOT89
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS4350X,115

Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Transistor Type
NPN
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
370mV @ 300mA, 3A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
300 @ 1A, 2V
Power - Max
1.6W
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
3 A
Power Dissipation
1600 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4159-2
934055628115
PBSS4350X T/R
PBSS4350X T/R
Philips Semiconductors
2004 Nov 04
50 V, 3 A
NPN low V
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm
(1)
(2)
Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm
(1)
(2)
(K/W)
(K/W)
Z
Z
10
10
th
th
10
10
10
10
10
10
= 1.
= 0.75.
= 1.
= 0.75.
1
1
3
2
1
10
3
2
1
10
(10)
(10)
5
5
(1)
(3)
(5)
(6)
(7)
(8)
(9)
(1)
(3)
(5)
(6)
(7)
(8)
(9)
(2)
(4)
(2)
(4)
CEsat
(3)
(4)
(3)
(4)
Fig.4 Transient thermal impedance as a function of pulse time; typical values.
Fig.5 Transient thermal impedance as a function of pulse time; typical values.
10
10
4
4
= 0.5.
= 0.33.
= 0.5.
= 0.33.
(BISS) transistor
10
10
(5)
(6)
(5)
(6)
3
3
= 0.2.
= 0.1.
= 0.2.
= 0.1.
10
10
2
2
(7)
(8)
(7)
(8)
2
2
= 0.05.
= 0.02.
= 0.05.
= 0.02.
.
.
10
10
6
1
1
(9)
(10) = 0.
(9)
(10) = 0.
1
1
= 0.01.
= 0.01.
10
10
10
10
2
2
PBSS4350X
Product specification
t
t
p
p
006aaa244
006aaa245
(s)
(s)
10
10
3
3

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