PMBT5551,215 NXP Semiconductors, PMBT5551,215 Datasheet - Page 3

• Manufacturer Part Number: PMBT5551,215
• Description: TRANS NPN 160V 300MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBT5551,215

• Transistor Type: NPN
• Current - Collector (ic) (max): 300mA
• Voltage - Collector Emitter Breakdown (max): 160V
• Vce Saturation (max) @ Ib, Ic: 200mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 10mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 568-5034-2; 933821840215; PMBT5551 T/R; PMBT5551 T/R; PMBT5551,215

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1.
CHARACTERISTICS
T
2004 Jan 21
R
I
I
h
V
V
C
C
f
F
amb
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
BEsat
NPN high-voltage transistor
th(j-a)
c
e
Transistor mounted on an FR4 printed-circuit board.
= 25 °C unless otherwise specified.
thermal resistance from junction to ambient
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
PARAMETER
PARAMETER
I
I
I
V
I
I
I
I
I
I
I
I
f = 10 Hz to 15.7 kHz
E
E
C
C
C
C
C
E
C
C
C
CE
I
I
I
= 0; V
= 0; V
= i
= 0; V
= 10 mA; I
= 50 mA; I
= 10 mA; I
= 50 mA; I
= i
= 10 mA; V
= 200 µA; V
C
C
C
= 5 V; (see Fig.2)
= 1 mA
= 10 mA
= 50 mA
e
c
3
= 0; V
= 0; V
CB
CB
EB
= 120 V
= 120 V; T
= 4 V
CONDITIONS
CB
EB
B
B
B
B
CE
CE
= 1 mA
= 5 mA
= 1 mA
= 5 mA
= 500 mV; f = 1 MHz
= 10 V; f = 1 MHz
= 10 V; f = 100 MHz
= 5 V; R
note 1
CONDITIONS
amb
S
= 100 °C
= 2 kΩ;
−
−
−
80
80
30
−
−
−
−
−
−
100
−
MIN.
VALUE
500
PMBT5551
Product data sheet
50
50
50
−
250
−
150
200
1
1
6
30
300
8
MAX.
UNIT
K/W
nA
µA
nA
mV
mV
V
V
pF
pF
MHz
dB
UNIT