PMBT5551,215 NXP Semiconductors, PMBT5551,215 Datasheet
PMBT5551,215
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933821840215
PMBT5551 T/R
PMBT5551 T/R
PMBT5551,215
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PMBT5551,215 Summary of contents
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DATA SHEET dbook, halfpage PMBT5551 NPN high-voltage transistor Product data sheet Supersedes data of 1999 Apr 15 DISCRETE SEMICONDUCTORS M3D088 2004 Jan 21 ...
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... NXP Semiconductors NPN high-voltage transistor FEATURES • Low current (max. 300 mA) • High voltage (max. 160 V). APPLICATIONS • General purpose • Telephony. DESCRIPTION NPN high-voltage transistor in a SOT23 plastic package. PNP complement: PMBT5401. MARKING TYPE NUMBER PMBT5551 Note Made in Hong Kong. ...
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... NXP Semiconductors NPN high-voltage transistor THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient th(j-a) Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation voltage ...
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... NXP Semiconductors NPN high-voltage transistor 160 handbook, full pagewidth h FE 120 −1 10 2004 Jan Fig.2 DC current gain; typical values 4 Product data sheet PMBT5551 MGD814 ...
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... NXP Semiconductors NPN high-voltage transistor PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2004 Jan scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES ...
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... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...
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... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...