PMBT5551,215 NXP Semiconductors, PMBT5551,215 Datasheet - Page 2

• Manufacturer Part Number: PMBT5551,215
• Description: TRANS NPN 160V 300MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBT5551,215

• Transistor Type: NPN
• Current - Collector (ic) (max): 300mA
• Voltage - Collector Emitter Breakdown (max): 160V
• Vce Saturation (max) @ Ib, Ic: 200mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 10mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 568-5034-2; 933821840215; PMBT5551 T/R; PMBT5551 T/R; PMBT5551,215

NXP Semiconductors
FEATURES
• Low current (max. 300 mA)
• High voltage (max. 160 V).
APPLICATIONS
• General purpose
• Telephony.
DESCRIPTION
NPN high-voltage transistor in a SOT23 plastic package.
PNP complement: PMBT5401.
MARKING
Note
1. * = p : Made in Hong Kong.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2004 Jan 21
PMBT5551
PMBT5551
V
V
V
I
I
I
P
T
T
T
C
CM
BM
stg
j
amb
CBO
CEO
EBO
tot
NPN high-voltage transistor
NUMBER
SYMBOL
* = t : Made in Malaysia.
* = W : Made in China.
TYPE
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
NAME
−
PARAMETER
MARKING CODE
plastic surface mounted package; 3 leads
*G1
(1)
open emitter
open base
open collector
T
amb
DESCRIPTION
2
≤ 25 °C
PINNING
PACKAGE
handbook, halfpage
CONDITIONS
PIN
1
2
3
Fig.1 Simplified outline (SOT23) and symbol.
Top view
base
emitter
collector
1
3
−
−
−
−
−
−
−
−65
−
−65
MIN.
DESCRIPTION
2
MAM255
180
160
6
300
600
100
250
+150
150
+150
MAX.
Product data sheet
PMBT5551
1
VERSION
SOT23
3
2
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT