MMBT5401LT1G ON Semiconductor, MMBT5401LT1G Datasheet - Page 5
MMBT5401LT1G
Manufacturer Part Number
MMBT5401LT1G
Description
TRANS SS PNP 150V HV SOT23
Manufacturer
ON Semiconductor
Type
High Voltager
Specifications of MMBT5401LT1G
Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
150V
Vce Saturation (max) @ Ib, Ic
500mV @ 5mA, 50mA
Current - Collector Cutoff (max)
50nA
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 10mA, 5V
Power - Max
225mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
150 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
- 500 mA
Maximum Dc Collector Current
0.5 A
Power Dissipation
225 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
50 at 1 mA at 5 V
Minimum Operating Temperature
- 55 C
Current, Collector
-500 mA
Current, Gain
50
Frequency
300 MHz
Package Type
SOT-23
Polarity
PNP
Primary Type
Si
Voltage, Breakdown, Collector To Emitter
-150 V
Voltage, Collector To Base
-160 V
Voltage, Collector To Emitter
-150 V
Voltage, Collector To Emitter, Saturation
-0.5 V
Voltage, Emitter To Base
-5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMBT5401LT1GOS
MMBT5401LT1GOS
MMBT5401LT1GOSTR
MMBT5401LT1GOS
MMBT5401LT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBT5401LT1G
Manufacturer:
ONSEMI
Quantity:
21 000
Company:
Part Number:
MMBT5401LT1G
Manufacturer:
ON
Quantity:
30 000
Company:
Part Number:
MMBT5401LT1G
Manufacturer:
ONSEMI
Quantity:
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Part Number:
MMBT5401LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
1000
700
500
300
200
100
70
50
30
20
10
1000
100
0.2
10
0.3
I
T
0.1
C
J
/I
Figure 12. Current Gain Bandwidth Product
= 25°C
B
0.5
= 10
V
T
A
CE
= 25°C
1.0
= 1 V
Figure 10. Turn−On Time
I
C
I
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (A)
2.0
3.0
1
5.0
t
V
d
CC
@ V
10
= 120 V
BE(off)
t
r
20
@ V
= 1.0 V
t
r
10
30 50
CC
@ V
= 120 V
CC
= 30 V
100
http://onsemi.com
200
100
5
2000
1000
0.001
700
500
300
200
100
70
30
20
0.01
50
0.1
0.2
1
1
0.3
I
T
C
J
/I
= 25°C
B
t
f
0.5
= 10
@ V
V
CE
t
CC
s
1.0
@ V
Figure 13. Safe Operating Area
, COLLECTOR EMITTER VOLTAGE (V)
= 30 V
Figure 11. Turn−Off Time
I
C
CC
, COLLECTOR CURRENT (mA)
2.0
= 120 V
10
3.0
5.0
1 Sec
10
t
f
10 mSec
@ V
20
100
CC
30 50
= 120 V
100
1000
200