MMBT5401LT1G ON Semiconductor, MMBT5401LT1G Datasheet

TRANS SS PNP 150V HV SOT23

MMBT5401LT1G

Manufacturer Part Number
MMBT5401LT1G
Description
TRANS SS PNP 150V HV SOT23
Manufacturer
ON Semiconductor
Type
High Voltager
Datasheets

Specifications of MMBT5401LT1G

Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
150V
Vce Saturation (max) @ Ib, Ic
500mV @ 5mA, 50mA
Current - Collector Cutoff (max)
50nA
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 10mA, 5V
Power - Max
225mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
150 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
- 500 mA
Maximum Dc Collector Current
0.5 A
Power Dissipation
225 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
50 at 1 mA at 5 V
Minimum Operating Temperature
- 55 C
Current, Collector
-500 mA
Current, Gain
50
Frequency
300 MHz
Package Type
SOT-23
Polarity
PNP
Primary Type
Si
Voltage, Breakdown, Collector To Emitter
-150 V
Voltage, Collector To Base
-160 V
Voltage, Collector To Emitter
-150 V
Voltage, Collector To Emitter, Saturation
-0.5 V
Voltage, Emitter To Base
-5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMBT5401LT1GOS
MMBT5401LT1GOS
MMBT5401LT1GOSTR

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MMBT5401LT1
High Voltage Transistor
PNP Silicon
Features
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in 99.5% alumina.
MAXIMUM RATINGS
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation
Thermal Resistance,
Total Device Dissipation
Thermal Resistance,
Junction and Storage Temperature
Pb−Free Packages are Available
FR−5 Board (Note 1)
T
Derate Above 25 C
Junction−to−Ambient
Alumina Substrate (Note 2)
T
Derate Above 25 C
Junction−to−Ambient
A
A
= 25 C
= 25 C
Characteristic
Rating
Preferred Device
Symbol
Symbol
T
V
V
V
R
R
J
P
P
CEO
CBO
EBO
, T
I
qJA
qJA
C
D
D
stg
−55 to +150
Value
−150
−160
−500
−5.0
Max
225
556
300
417
1.8
2.4
1
mW/ C
mW/ C
mAdc
Unit
Unit
mW
mW
Vdc
Vdc
Vdc
C/W
C/W
C
Preferred devices are recommended choices for future use
and best overall value.
MMBT5401LT1
MMBT5401LT1G
MMBT5401LT3
MMBT5401LT3G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SOT−23 (TO−236)
Device
CASE 318
STYLE 6
ORDERING INFORMATION
BASE
1
2L = Device Code
M
(Pb−Free)
(Pb−Free)
Package
= Month Code
SOT−23
SOT−23
SOT−23
SOT−23
COLLECTOR
EMITTER
3
2
10,000 Tape & Reel
10,000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
MARKING
DIAGRAM
Shipping
2L M

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MMBT5401LT1G Summary of contents

Page 1

... STYLE Device Code M = Month Code ORDERING INFORMATION Device Shipping Package MMBT5401LT1 3000 Tape & Reel SOT−23 MMBT5401LT1G 3000 Tape & Reel SOT−23 (Pb−Free) MMBT5401LT3 10,000 Tape & Reel SOT−23 MMBT5401LT3G 10,000 Tape & Reel SOT−23 (Pb−Free) †For information on tape and reel specifications, ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I = −1.0 mAdc Collector −Base Breakdown Voltage = −100 mAdc Emitter −Base Breakdown Voltage = −10 mAdc ...

Page 3

... D K 0.95 0.037 0.9 0.035 0.031 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MMBT5401LT1 SOT−23−3 (TO−236) CASE 318−08 ISSUE AK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14 ...

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