MMBT5401LT1G ON Semiconductor, MMBT5401LT1G Datasheet - Page 2

• Manufacturer Part Number: MMBT5401LT1G
• Description: TRANS SS PNP 150V HV SOT23
• Manufacturer: ON Semiconductor
• Type: High Voltager

Specifications of MMBT5401LT1G

• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 150V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 5mA, 50mA
• Current - Collector Cutoff (max): 50nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 10mA, 5V
• Power - Max: 225mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 150 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: - 500 mA
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 225 mW
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 50 at 1 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Current, Collector: -500 mA
• Current, Gain: 50
• Frequency: 300 MHz
• Package Type: SOT-23
• Polarity: PNP
• Primary Type: Si
• Voltage, Breakdown, Collector To Emitter: -150 V
• Voltage, Collector To Base: -160 V
• Voltage, Collector To Emitter: -150 V
• Voltage, Collector To Emitter, Saturation: -0.5 V
• Voltage, Emitter To Base: -5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMBT5401LT1GOS; MMBT5401LT1GOS; MMBT5401LT1GOSTR

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
Current −Gain — Bandwidth Product
Output Capacitance
Small Signal Current Gain
Noise Figure
(I
(I
(I
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(V
(I
(I
C
C
E
C
C
C
C
C
C
C
C
C
C
CB
CB
CB
= −10 mAdc, I
= −1.0 mAdc, I
= −100 mAdc, I
= −1.0 mAdc, V
= −10 mAdc, V
= −50 mAdc, V
= −10 mAdc, I
= −50 mAdc, I
= −10 mAdc, I
= −50 mAdc, I
= −10 mAdc, V
= −1.0 mAdc, V
= −200 mAdc, V
= −120 Vdc, I
= −120 Vdc, I
= −10 Vdc, I
C
B
B
B
B
E
B
E
CE
CE
CE
= 0)
E
E
CE
CE
CE
= −1.0 mAdc)
= −5.0 mAdc)
= −1.0 mAdc)
= −5.0 mAdc)
= 0, f = 1.0 MHz)
= 0)
= 0)
= 0, T
= 0)
= −5.0 Vdc)
= −5.0 Vdc)
= −10 Vdc, f = 100 MHz)
= −5.0 Vdc)
= −10 Vdc, f = 1.0 kHz)
= −5.0 Vdc, R
A
= 100°C)
Characteristic
S
= 10 W, f = 1.0 kHz)
(T
A
= 25°C unless otherwise noted)
http://onsemi.com
2
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
CE(sat)
BE(sat)
C
h
CES
h
NF
f
obo
FE
T
fe
−150
−160
−5.0
Min
100
50
60
50
40
−
−
−
−
−
−
−
−
Max
−0.2
−0.5
−1.0
−1.0
−50
−50
240
300
200
6.0
8.0
−
−
−
−
−
nAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
dB
pF
−
−