MMBT5401LT1G ON Semiconductor, MMBT5401LT1G Datasheet - Page 3
MMBT5401LT1G
Manufacturer Part Number
MMBT5401LT1G
Description
TRANS SS PNP 150V HV SOT23
Manufacturer
ON Semiconductor
Type
High Voltager
Specifications of MMBT5401LT1G
Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
150V
Vce Saturation (max) @ Ib, Ic
500mV @ 5mA, 50mA
Current - Collector Cutoff (max)
50nA
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 10mA, 5V
Power - Max
225mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
150 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
- 500 mA
Maximum Dc Collector Current
0.5 A
Power Dissipation
225 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
50 at 1 mA at 5 V
Minimum Operating Temperature
- 55 C
Current, Collector
-500 mA
Current, Gain
50
Frequency
300 MHz
Package Type
SOT-23
Polarity
PNP
Primary Type
Si
Voltage, Breakdown, Collector To Emitter
-150 V
Voltage, Collector To Base
-160 V
Voltage, Collector To Emitter
-150 V
Voltage, Collector To Emitter, Saturation
-0.5 V
Voltage, Emitter To Base
-5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMBT5401LT1GOS
MMBT5401LT1GOS
MMBT5401LT1GOSTR
MMBT5401LT1GOS
MMBT5401LT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBT5401LT1G
Manufacturer:
ONSEMI
Quantity:
21 000
Company:
Part Number:
MMBT5401LT1G
Manufacturer:
ON
Quantity:
30 000
Company:
Part Number:
MMBT5401LT1G
Manufacturer:
ONSEMI
Quantity:
2 420
Part Number:
MMBT5401LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
150
100
200
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
70
50
30
20
0
0.005
0.1
0.01
0.2
I
0.02
C
T
- 55°C
0.3
J
= 1.0 mA
= 125°C
25°C
0.5
0.05
10
10
10
10
10
10
10
-1
-2
-3
3
2
1
0
0.3
T
V
J
REVERSE
CE
0.2
0.1
= 125°C
1.0
Figure 2. Collector Saturation Region
= 30 V
Figure 3. Collector Cut−Off Region
75°C
25°C
0.1
V
10 mA
BE
Figure 1. DC Current Gain
0.2
I
, BASE-EMITTER VOLTAGE (VOLTS)
C
http://onsemi.com
, COLLECTOR CURRENT (mA)
0
I
B
2.0
, BASE CURRENT (mA)
I
0.1
C
= I
FORWARD
3
CES
3.0
0.5
0.2
30 mA
0.3
1.0
5.0
0.4
0.5
2.0
10
0.6
100 mA
0.7
5.0
V
V
20
CE
CE
= - 1.0 V
= - 5.0 V
30
10
50
20
100
50