PBSS301ND,115 NXP Semiconductors, PBSS301ND,115 Datasheet - Page 8

• Manufacturer Part Number: PBSS301ND,115
• Description: TRANS NPN 20V 4A LOW SAT SOT457
• Manufacturer: NXP Semiconductors

Specifications of PBSS301ND,115

• Package / Case: SC-74-6
• Transistor Type: NPN
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 420mV @ 600mA, 6A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 2A, 2V
• Power - Max: 1.1W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 65 C
• Configuration: Single Quad Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 4 A
• Maximum Dc Collector Current: 4 A
• Power Dissipation: 2500 mW
• Maximum Operating Frequency: 100 MHz (Typ)
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4149-2; 934059128115; PBSS301ND T/R; PBSS301ND T/R

NXP Semiconductors
PBSS301ND_3
Product data sheet
Fig 9. Collector-emitter saturation voltage as a
Fig 11. Collector-emitter saturation resistance as a
R
V
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
CEsat
CEsat
(V)
( )
10
10
10
10
10
10
1.0
10
10
1
1
2
3
10
2
1
2
10
I
function of collector current; typical values
I
function of collector current; typical values
C
C
amb
amb
amb
amb
amb
amb
/I
/I
1
1
B
B
= 20
= 20
= 100 C
= 25 C
= 55 C
= 100 C
= 25 C
= 55 C
1
1
10
10
10
10
(1)
(2)
(3)
2
2
(1)
10
(2)
10
3
3
(3)
10
10
006aaa330
006aaa335
I
I
4
4
C
C
(mA)
(mA)
Rev. 03 — 7 September 2007
10
10
5
5
Fig 10. Collector-emitter saturation voltage as a
Fig 12. Collector-emitter saturation resistance as a
V
R
(1) I
(2) I
(3) I
(1) I
(2) I
(3) I
CEsat
CEsat
( )
(V)
10
10
10
10
10
10
10
10
10
1
1
1
2
3
10
3
2
1
2
10
T
function of collector current; typical values
T
function of collector current; typical values
C
C
C
C
C
C
amb
amb
/I
/I
/I
/I
/I
/I
1
1
B
B
B
B
B
B
20 V, 4 A NPN low V
= 100
= 50
= 10
= 100
= 50
= 10
= 25 C
= 25 C
1
1
(1)
(2)
(3)
(1)
(2)
(3)
10
10
10
10
2
2
PBSS301ND
CEsat
10
10
3
3
© NXP B.V. 2007. All rights reserved.
(BISS) transistor
10
10
006aaa331
006aaa333
I
I
4
4
C
C
(mA)
(mA)
10
10
5
5
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